The interface quality of Ge nanoparticles grown in thick silica matrix

Dasovic J.; Dubcek P.; Pucic I.; Bernstorff S.; Radic N.; Pivac B.

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The interface quality of Ge nanoparticles grown in thick silica matrix

机译：在厚二氧化硅基质中生长的Ge纳米颗粒的界面质量

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摘要

Germanium nanoparticles, or Ge quantum dots (QDs), embedded in different transparent dielectric matrix exhibit properties significantly different from the same bulk semiconductor and therefore exhibit a considerable potential for applications in advanced electronic and optoelectronic devices. It is expected that the quantum confinement effect will tune the optical bandgap simply by varying the QDs size. Nevertheless, the question remains whether and how the defects often present in the matrix or at interfaces affect their properties.

机译：嵌入不同透明电介质基质中的锗纳米颗粒或Ge量子点（QD）表现出与相同的体半导体明显不同的特性，因此具有在先进电子和光电设备中应用的巨大潜力。可以预期，量子限制效应将仅通过改变QD尺寸来调节光学带隙。然而，问题仍然存在于基质中或界面处的缺陷是否以及如何影响它们的性能。

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来源
《Applied Surface Science》 |2017年第31期|1-7|共7页
作者
Dasovic J.; Dubcek P.; Pucic I.; Bernstorff S.; Radic N.; Pivac B.;
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作者单位

RuderBoskovic Inst, Bijenicka 54, Zagreb 10000, Croatia;

RuderBoskovic Inst, Bijenicka 54, Zagreb 10000, Croatia;

RuderBoskovic Inst, Bijenicka 54, Zagreb 10000, Croatia;

Elettra Sincrotrone Trieste, SS 14,Km 163-5, Basovizza, TS, Italy;

RuderBoskovic Inst, Bijenicka 54, Zagreb 10000, Croatia;

RuderBoskovic Inst, Bijenicka 54, Zagreb 10000, Croatia;

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正文语种 eng
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关键词
Ge QDs; GISAXS; GIWAXS; Infrared spectroscopy; Photoluminescence; Advanced solar cells;

机译：Ge QDs;GISAXS;GIWAXS;红外光谱;光致发光;先进的太阳能电池;

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The interface quality of Ge nanoparticles grown in thick silica matrix

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