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Phase dependent photocatalytic activity of Ag loaded TiO2 films under sun light

机译:Ag负载TiO2薄膜在太阳光下的相变光催化活性

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摘要

Well-crystallized anatase and mixed (anatase-rutile) phase TiO2 thin films were deposited by DC magnetron sputtering technique at various DC powers in the range of 80-140 W. Pure anatase phase was observed in the TiO2 films deposited at low power of 80 W. Films deposited at 120 W were composed of both anatase and rutile phases. At higher power of 140 W, the films are rutile dominated and the rutile percentage increased from 0 to 82% with increase of DC power. The same results of phase change were confirmed by Raman studies. The surface morphology of the TiO2 films showed that the density of the films increased with increase of sputter power. The optical band gap of the films varied from 3.35 to 3.14 eV with increase of DC power. The photocatalytic activity of the TiO2 films increased with increasing DC power up to 120 W and after that it decreases. We found that the TiO2 films deposited at 120 W with 48% of rutile phase, exhibited high photocatalytic activity (43% of degradation) under UV light compared with other TiO2 films. After loading the optimized Ag nanoparticles on the mixed phase TiO2 films, the photocatalytic activity shifted from UV to visible region with enhancement of photocatalytic activity (55% of degradation). (C) 2015 Elsevier B.V. All rights reserved.
机译:通过DC磁控溅射技术在80-140 W范围内的各种直流功率下沉积了结晶良好的锐钛矿和混合(锐钛矿-金红石)相TiO2薄膜。在80的低功率下沉积的TiO2薄膜中观察到了纯锐钛矿相W.以120 W沉积的薄膜由锐钛矿相和金红石相组成。在140 W的更高功率下,薄膜以金红石为主,并且随着DC功率的增加,金红石百分比从0%增加到82%。拉曼研究证实了相同的相变结果。 TiO2薄膜的表面形貌表明,随着溅射功率的增加,薄膜的密度增加。随着直流功率的增加,薄膜的光学带隙在3.35至3.14 eV之间变化。 TiO2薄膜的光催化活性随直流功率增加到120 W而增加,然后降低。我们发现,与其他TiO2薄膜相比,在120 W下以48%的金红石相沉积的TiO2薄膜在紫外光下表现出较高的光催化活性(降解率为43%)。在混合相TiO2薄膜上负载优化的Ag纳米粒子后,光催化活性从UV转移到可见光区域,并增强了光催化活性(降解55%)。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2016年第28期|732-739|共8页
  • 作者单位

    Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India;

    Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India;

    Nitte Meenakshi Inst Technol, Ctr Nanomat & MEMS, Bangalore 560064, Karnataka, India|Nitte Meenakshi Inst Technol, Dept Phys, Bangalore 560064, Karnataka, India;

    Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Sputtering; XRD; Surface plasmons; Photo catalysis;

    机译:溅射;XRD;表面等离子体;光催化;

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