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Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

机译:利用氖离子显微镜进行GaSb纳米图案化研究:纳米结构的形成以及与低能纳米图案化的比较

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Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (heliumeon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 key). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms. (C) 2016 Elsevier B.V. All rights reserved.
机译:已经证明,GaSb表面的低能辐射会导致纳米柱的形成。在非原位进行时,控制离子束的参数以控制纳米图案的形成具有挑战性。尽管主要用于成像和切割目的,但多束(氦/氖)离子显微镜的发展为使用这些显微镜进行原位离子辐照和纳米图案研究开辟了道路。在这项研究中,GaSb表面的原位照射(氖离子)/成像(氦离子)是使用卡尔蔡司氖离子显微镜在低能量(5和10键)下进行的。用氦离子成像后,显示出在特定注量下会形成纳米点,然后对其进行平滑处理。 SEM异位成像显示纳米孔形成的大小受离子能量和能量密度控制。与以相似的通量进行较低能量的异位氖离子辐照相比,在该处形成了纳米柱,结果表明,随着能量从2 keV变为5 keV,纳米结构类型和形成机理发生了转变。模拟表明,随着离子束能量的增加,弹道扩散的增加​​和相分离强度的降低与抑制较高能量下的纳米柱形成相一致。碰撞级联模拟表明向批量驱动机制的过渡。 (C)2016 Elsevier B.V.保留所有权利。

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