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The evolution of structure and defects in the implanted Si surface: Inspecting by reflective second harmonic generation

机译：注入的硅表面的结构和缺陷的演变：通过反射二次谐波的产生进行检查

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摘要

Detailed information about the recrystallization and formation of defects in the ultra-shallow junction of implanted Si is a key for semiconductor fabrication below 20 nm regime. The surface quality of highly doped Si via annealing treatment would influence the fabrication and yield. Here, we employ nonlinear optics to study the correlated physical phenomena and underlying evolution of restructure of P+ ion implanted Si. Reflective second harmonic generation (RSHG) results reveal the restructure of the implanted Si layer that involves recrystallization, dopant activation and dopant diffusion in correlation with annealing temperature. In the implanted Si layer, defects cause inactivity in electrical properties and generate isotropic dipole contribution to the RSHG pattern. The trend of isotropic dipole contribution is consistent with the sheet resistance measurement that presents more information about the evolution of the restructure. At lower annealing temperatures, the precipitation and the interstitialcy pairs form due to the effect of transient enhanced diffusion, and then the isotropic contribution of the RSHG pattern and sheet resistance sharply increases because of aggregation of the dopants. The isotropic contribution of RSHG is an index of the transformation of the electrical property as well as estimate recrystallization during rapid thermal annealing. (C) 2015 Elsevier B.V. All rights reserved.
机译：有关注入的Si的超浅结中再结晶和缺陷形成的详细信息，是20 nm以下制程半导体制造的关键。通过退火处理的高掺杂硅的表面质量将影响制造和成品率。在这里，我们采用非线性光学技术来研究相关的物理现象以及P +离子注入的Si的重组的潜在演化。反射二次谐波产生（RSHG）结果表明，注入的硅层的结构与退火温度有关，该结构涉及重结晶，掺杂剂活化和掺杂剂扩散。在注入的Si层中，缺陷会导致电性能失效，并产生各向同性偶极子对RSHG模式的贡献。各向同性偶极子贡献的趋势与薄层电阻测量一致，薄层电阻测量提供了有关结构演变的更多信息。在较低的退火温度下，由于瞬态增强扩散的影响而形成沉淀和间隙对，然后由于掺杂剂的聚集，RSHG图案的各向同性贡献和薄层电阻急剧增加。 RSHG的各向同性贡献是电性能转变以及快速热退火过程中重结晶估计的指标。 （C）2015 Elsevier B.V.保留所有权利。

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