Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

Kang H. L.; Lao J. B.; Li Z. P.; Yao W. Q.; Liu C.; Wang J. Y.

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Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

机译：通过量化AES和SIMS溅射深度剖面来重建GaAs / AlAs超晶格多层结构

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摘要

The GaAs/AlAs superlattice multilayer structures were deposited on GaAs (1 0 0) substrates by molecular beam epitaxial (MBE) technique. The as-prepared samples were characterized respectively by Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) depth profiling techniques. The measured depth profiles were then fitted by the Mixing-Roughness-Information (MRI) model. The depth resolution values for both depth profiling techniques were evaluated quantitatively from the fitted MRI parameters and the as-prepared GaAs/AlAs multilayer structure was determined accordingly. (C) 2015 Elsevier B.V. All rights reserved.

机译：GaAs / AlAs超晶格多层结构通过分子束外延（MBE）技术沉积在GaAs（1 0 0）衬底上。分别通过俄歇电子能谱（AES）和二次离子质谱（SIMS）深度分析技术对制备的样品进行表征。然后，通过混合粗糙度信息（MRI）模型拟合测量的深度轮廓。从拟合的MRI参数中定量评估了两种深度分析技术的深度分辨率值，并据此确定了所制备的GaAs / AlAs多层结构。（C）2015 Elsevier B.V.保留所有权利。

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来源
《Applied Surface Science》 |2016年第ptaa期|584-588|共5页
作者
Kang H. L.; Lao J. B.; Li Z. P.; Yao W. Q.; Liu C.; Wang J. Y.;
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作者单位

Shantou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China;

Shantou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China;

Tsinghua Univ, Anal Ctr, Beijing 100084, Peoples R China;

Tsinghua Univ, Anal Ctr, Beijing 100084, Peoples R China;

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China;

Shantou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China;

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正文语种 eng
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关键词
GaAs/AlAs superlattice; AES; SIMS; Depth profiling; MRI model;

机译：GaAs / AlAs超晶格;AES;SIMS;深度分析;MRI模型;

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专利

1. Dependence of depth resolution on primary energy of low-energy Ar+ Ions (100-1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice [J] . Bungo T, Nagatomi T, Takai Y Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2006,第12a13期

机译：GaAs / AlAs超晶格AES溅射深度分析中深度分辨率对低能Ar +离子（100-1000 eV）一次能的依赖性
2. Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS [J] . Hofmann S. Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2000,第1期

机译：使用AES和SIMS在溅射轮廓分析中实现最终的深度分辨率和轮廓重建
3. Preferential sputtering effects in depth profiling of multilayers with SIMS, XPS and AES [J] . Hofmann S., Zhou G., Kovac J., Applied Surface Science . 2019,第Jula31期

机译：利用SIMS，XPS和AES的多层深度剖析的优惠溅射效应
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机译：在（311）上生长的ALAS / GAAs多层结构的运输特性A GaAs基材
5. Simulation and modeling of the structure and surface profile of sputtered refractory films for VLSI barriers. [D] . Salahuddin, Mohammad. 1998

机译：用于VLSI阻挡层的溅射耐火膜的结构和表面轮廓的仿真和建模。
6. A comparative study of low energy radiation response of AlAs GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures [O] . M. Jiang, H. Y. Xiao, S. M. Peng, -1

机译：AlAsGaAs和GaAs / AlAs超晶格的低能辐射响应及其对电子结构的损伤作用的比较研究
7. Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles [O] . H.L. Kang, J.B. Lao, Z.P. Li, 2016

机译：通过量化AES和SIMS溅射深度剖面来重建GaAs / AlAs超晶格多层结构
8. Inelastic Tunneling in AlAs-GaAs-AlAs Heterostructures [R] . Mendez, E. E., Calleja, E., Wang, W. I. 1988

机译：alas-Gaas-alas异质结构中的非弹性隧道效应

Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

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