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The roles of buffer layer thickness on the properties of the ZnO epitaxial films

机译：缓冲层厚度对ZnO外延膜性能的影响

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摘要

In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers. (C) 2015 Elsevier B.V. All rights reserved.
机译：在本文中，作者研究了在蓝宝石衬底上获得高质量ZnO外延膜的缓冲层厚度的优化。已经清楚揭示了不同厚度的缓冲液的生长机理，包括初始成核和垂直生长，随后的横向生长以及小晶粒的聚结，以及最终沿现有大晶粒的垂直生长。总体而言，除了变形的表面形态外，缓冲液的质量随厚度的增加而提高。但是，通过对外延层特性的全面评估，外延膜的质量由缓冲液的表面形态（而不是其结构，光学或电学性质）简要确定。品质最佳的外延层已生长在具有光滑表面和良好聚结晶粒的缓冲液上。同时，由于蓝宝石和ZnO之间的巨大晶格失配，在缓冲层的生长过程中不可避免地形成了位错。更重要的是，随着膜变厚，位错可能会吸引其他较小的位错和缺陷，从而降低总线能量，从而导致形成V型缺陷，这些缺陷与缓冲区中的螺纹位错的底部有关。从顶视图看，V型缺陷表现为深而大的六角形凹坑，它们可能充当电子陷阱，从而影响外延层的自由载流子浓度。 （C）2015 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2016年第ptaa期|557-564|共8页
  • 作者

    Tang Kun; Huang Shimin; Gu Shulin; Zhu Shunming; Ye Jiandong; Xu Zhonghua; Zheng Youdou;

  • 作者单位

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Inst Optoelect Yangzhou, Yangzhou 225009, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210023, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    Zinc oxide; Epitaxy; Sapphire; Buffer layer; MOCVD; Material characterizations;

    机译：氧化锌外延蓝宝石缓冲层MOCVD材料表征;

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