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首页> 外文期刊>Applied Surface Science >Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O-3 buffer layer
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Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O-3 buffer layer

机译：使用Ba（Mg1 / 3Ta2 / 3）O-3缓冲层改善PbZr0.52Ti0.48O3薄膜的温度依赖性和介电可调性

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摘要

In this paper, Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O-3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan delta and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/degrees C with the thickness of BMT buffer layer increasing in the range from 25 to 205 degrees C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films. (C) 2015 Elsevier B.V. All rights reserved.
机译：本文采用溶胶-凝胶法制备了Pb（Zr0.52Ti0.48）O-3（PZT）薄膜。研究了Ba（Mg1 / 3Ta2 / 3）O-3（BMT）缓冲层对PZT薄膜的温度依赖性和介电可调性的影响。随着BMT缓冲层厚度的增加，PZT薄膜的损耗角正切和可调性降低，而可调性仍保持在10％以上。该结果表明，BMT缓冲层可以改善PZT薄膜的介电可调性。此外，随着BMT缓冲层的厚度在25至205℃的范围内增加，介电常数的温度系数从2333.4降低至906.9ppm /℃，这表明BMT缓冲层可以改善PZT薄膜的温度稳定性。 。因此，BMT缓冲层在改善PbZr0.52Ti0.48O3薄膜的温度依赖性和介电可调性方面起着关键作用。 （C）2015 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2016年第ptaa期|579-583|共5页
  • 作者

    Wu Zhi; Zhou Jing; Chen Wen; Shen Jie; Yang Huimin; Zhang Shisai; Liu Yueli;

  • 作者单位

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    PZT thin films; BMT buffer layer; Temperature dependence; Dielectric tunability properties; Sol-gel method;

    机译：PZT薄膜;BMT缓冲层;温度依赖性;介电可调性;Sol-gel法;

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