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Fabrication of VO2-based multilayer structure with variable emittance

机译：可变发射率VO2基多层结构的制备

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摘要

VO2 film holds promise for smart radiation device (SRD) use because of its infrared reflection change through the semiconductor-to-metal transition (SMT). In present study, a multilayer structure which consisted of VO2 layer, HfO2 layer and Ag layer was fabricated to achieve variable emittance based on the principle of reflection filter and SMT of VO2. It was found that with optimal 50 nm-thick VO2 layer, emittance of the multilayer structure could reversibly change from 0.13 at 30 degrees C to 0.68 at 80 degrees C with emittance variability of 0.55. Emittance hysteresis loop with transition temperature (T-c) of 58 degrees C and narrow width of 4 degrees C was obtained. Finally, multilayer structures with W-doped VO2 films were deposited and transition temperature decreased from 58 to 5 degrees C as W doping concentration increased from 0% to 3%, with Tc decreasing efficiency of -17.2 degrees C/at%. However, W doping also led to increased low temperature infrared absorption of VO2 film, which resulted in decreased emittance variability for the multilayer structure, from 0.55 to 0.37 as the W doping concentration in VO2 layer increase from 0% to 3%. (C) 2015 Elsevier B.V. All rights reserved.
机译：VO2膜由于通过半导体到金属的过渡（SMT）引起的红外反射变化而有望用于智能辐射设备（SRD）。本研究基于VO2的反射滤光片和SMT原理，制备了由VO2层，HfO2层和Ag层组成的多层结构，以实现可变的发射率。发现最佳的50nm厚的VO 2层，多层结构的发射率可逆地从30℃下的0.13变化到80℃下的0.68，发射率变化为0.55。获得具有58摄氏度的转变温度（T-c）和4摄氏度的窄宽度的发射磁滞回线。最后，沉积了具有W掺杂的VO2薄膜的多层结构，并且随着W掺杂浓度从0％增加到3％，转变温度从58降低到5摄氏度，Tc降低了-17.2摄氏度/原子％。然而，W掺杂还导致VO 2膜的低温红外吸收增加，这导致多层结构的发射率变异性从0.55降低到0.37，这是因为VO 2层中的W掺杂浓度从0％增加到3％。 （C）2015 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2015年第30期|230-235|共6页
  • 作者

    Wang Xiao; Cao Yunzhen; Zhang Yuzhi; Yan Lu; Li Ying;

  • 作者单位

    Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

    Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

    Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

    Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

    Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Vanadium dioxide; Thin films; Optical properties; Multilayer structure; Variable emittance; W-doping;

    机译：二氧化钒;薄膜;光学性能;多层结构;可变发射率;W掺杂;

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