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首页> 外文期刊>Applied Surface Science >Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon
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Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

机译：布拉格镜反​​射多孔硅背反射器，用于捕集氢化非晶硅中的光

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摘要

In this study we report on the photosensitivity of the electrical properties of a structure based on a thin film of hydrogenated amorphous silicon (a-Si:H) deposited onto a multilayer porous silicon (Bragg mirrors) formed in crystalline silicon (c-Si). We present the results obtained from dark and under illumination current voltage (I-V) characteristics of Al/a-Si:H/PSi/c-Si structure. The aim of this study is to evaluate the influence of Bragg mirrors porous silicon at back-side on the electrical photosensitivity of a-Si:H. In this purpose, samples of monolayer and multilayer porous silicon have been formed in crystalline silicon by electrochemical etching method. The morphology and optical properties of monolayer samples have investigated by gravimetric analysis and reflectivity measurements, the Bragg mirrors are investigated by reflectivity measurements. The a-Si:H thin films were deposited by the DC magnetron sputtering technique in a mixture of argon and hydrogen atmosphere. These films were characterized by Fourier Transformed Infra Red spectroscopy and optical transmission. The I V results obtained from dark show a decrease in current of Al/a-Si:H/PSi/c-Si structure compared with Al/a-Si:H/c-Si structure while there is enhancement of the photocurrent in the structure with Bragg mirrors back reflector. This result attests that the Bragg mirrors formed on crystalline silicon play an important role in the light trapping. (C) 2015 Elsevier B.V. All rights reserved.
机译：在这项研究中，我们报告了基于氢化非晶硅薄膜（a-Si：H）沉积在结晶硅（c-Si）中形成的多层多孔硅（Bragg镜）上的结构的电性能的光敏性。我们介绍了从黑暗和在Al / a-Si：H / PSi / c-Si结构的照明电流电压（I-V）特性下获得的结果。本研究的目的是评估背面的布拉格反射镜多孔硅对a-Si：H的电光敏性的影响。为此，已经通过电化学蚀刻方法在结晶硅中形成了单层和多层多孔硅的样品。通过重量分析和反射率测量研究了单层样品的形貌和光学性质，通过反射率测量研究了布拉格反射镜。通过DC磁控溅射技术在氩气和氢气气氛的混合物中沉积a-Si：H薄膜。这些膜通过傅立叶变换红外光谱和光学透射来表征。从黑暗中获得的IV结果表明，与Al / a-Si：H / c-Si结构相比，Al / a-Si：H / PSi / c-Si结构的电流减小，同时结构中的光电流增加配有布拉格镜后反射镜。该结果证明在晶体硅上形成的布拉格反射镜在光捕获中起重要作用。 （C）2015 Elsevier B.V.保留所有权利。

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