Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization

Chen C. H.; Niu H.; Lee C. P.

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Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization

机译：氦离子束诱导的外延结晶GeMn再结晶过程的局部结构研究

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In this study, GeMn thin films were fabricated by implantation of Mn ions at room temperature. Post-annealing was performed using 2 MeV of He+ ion irradiation. The recrystallization phenomena of the GeMn thin films were analyzed by Raman scattering. High-resolution transmission electron microscopy was also used to characterize the recrystallization process before and after ion beam annealing. A structure phase transition-like behavior of the recrystallization process of GeMn thin films was observed in the Raman spectra. (C) 2015 Elsevier B.V. All rights reserved.

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《Applied Surface Science》 |2015年第1期|120-123|共4页
作者
Chen C. H.; Niu H.; Lee C. P.;
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作者单位

Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Hsinchu 30013, Taiwan;

Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Hsinchu 30013, Taiwan;

Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan;

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正文语种 eng
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Raman scattering; TEM; Ion beam induced epitaxial crystallization; Ion beam material modification;

机译：拉曼散射TEM离子束诱导外延结晶离子束材料改性;

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Local structure study of GeMn recrystallization process by helium ion beam-induced epitaxial crystallization

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