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首页> 外文期刊>Applied Surface Science >Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
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Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

机译：完整的基于Ta2O5的ALD堆栈，用于在真空XPS监控中生长的电阻性随机存取存储器

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摘要

Ta2O5-based metal-insulator-metal stacks for resistive random access memory were grown by atomic layer deposition technique only with the emphasis on different top metal-oxide interface engineering. The impact of top TiN electrode growth and NH3 treatment on dielectric chemical and electrical properties was discussed. In addition the TiN/Ta2O5/Al2O3/TiN stack with bilayer dielectric was grown and studied too. According to in vacuo XPS analysis at top interface both TiN/Ta2O5/TiN and TiN/Ta2O5 (NH3-treated)/TiN stacks comprise the TaOxNy, interlayer which is twice thicker in the case of stack with NH3 treatment (similar to 1.3 nm) in comparison with untreated one (similar to 0.7 nm). In vacuo XPS analysis also showed that 2 nm Al2O3 insert between Ta2O5 and top TiN electrode allowed to completely block formation of TaOxNy interlayer at TiN/Ta2O5/Al2O3/TiN stack. As a result it was found that TiN/Ta2O5/TiN demonstrated gradual and rather slow (similar to 10(-3) s) character of resistive switching while the switching at stack with bilayer Ta2O5/Al2O3 dielectric is much more abrupt, faster and it reveals more than one order of magnitude higher endurance. (C) 2015 Elsevier B.V. All rights reserved.
机译：通过原子层沉积技术生长用于电阻式随机存取存储器的基于Ta2O5的金属-绝缘体-金属叠层，仅着重于不同的顶层金属-氧化物界面工程。讨论了顶部TiN电极生长和NH3处理对介电化学和电学性质的影响。此外，还生长并研究了具有双层电介质的TiN / Ta2O5 / Al2O3 / TiN叠层。根据真空XPS分析，在顶部界面处TiN / Ta2O5 / TiN和TiN / Ta2O5（经NH3处理）/ TiN叠层都包含TaOxNy，中间层在经过NH3处理的叠层（约1.3 nm）中要厚两倍与未经处理的（与0.7 nm相似）相比。真空XPS分析还显示，在Ta2O5和顶部TiN电极之间插入2 nm Al2O3可以完全阻止TiN / Ta2O5 / Al2O3 / TiN叠层形成TaOxNy中间层。结果发现，TiN / Ta2O5 / TiN表现出渐进且缓慢的电阻切换特性（类似于10（-3）s），而使用Ta2O5 / Al2O3双层电介质的堆叠切换则更突变，更快，并且显示出更高的耐力一个数量级以上。 （C）2015 Elsevier B.V.保留所有权利。

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