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首页> 外文期刊>Applied Surface Science >The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se_2 thin films
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The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se_2 thin films

机译：溅射枪不同位置对Cu-In-Ga前驱体和Cu（In，Ga）Se_2薄膜的形态和结构性能的影响

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摘要

The influence of two different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(ln,Ga)Se2 (CIGS) thin films was investigated. All the precursors contained cauliflower-like nodules, whereas smaller subnodules were observed on the background. All the precursors revealed apparent three-layered structures, and voids were observed at the CIGS/SLG interface of Sets 1 and 2 films rather than Set 3 film. EDS results indicated that all CIGS thin films were Cu-deficient. Based on the grazing incidence X-ray diffraction (GIXRD) patterns, as-selenized films showed peaks corresponding to the chalcopyrite-type CIGS structure. Depth-resolved Raman spectra showed the formation of a dominant CIGS phase inside the films for all the as-selenized samples investigated, and of an ordered vacancy compound (OVC) phase like Cu(In,Ga)_3Se_5 or Cu(In,Ga)_2Se_3.5 at the surface and/or CIGS/SLG interface region of Sets 2 and 3 films. No evidence was obtained on the presence of an OVC phase in Set 1 CIGS film, which may be speculated that long-time annealing is contributed to suppress the growth of OVC phases. The results of the present work suggest that the metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.
机译：研究了两种不同位置的喷枪对Cu-In-Ga前驱体和Cu（ln，Ga）Se2（CIGS）薄膜的形态和结构性能的影响。所有前体均含有花椰菜样结节，而在背景上观察到较小的亚结节。所有前体均显示出明显的三层结构，并且在第1组和第2组膜而非第3组膜的CIGS / SLG界面处观察到空隙。 EDS结果表明，所有CIGS薄膜都缺乏铜。基于掠入射X射线衍射（GIXRD）模式，硒化膜显示出对应于黄铜矿型CIGS结构的峰。深度分辨拉曼光谱显示，在所研究的所有硒化样品中，薄膜内部均形成了占优势的CIGS相，并形成了有序的空位化合物（OVC）相，例如Cu（In，Ga）_3Se_5或Cu（In，Ga）第2组和第3组膜的表面和/或CIGS / SLG界面区域的_2Se_3.5。没有证据表明在Set 1 CIGS膜中存在OVC相，可以推测长期退火有助于抑制OVC相的生长。本工作的结果表明，与用标题定位喷枪溅射的金属前驱体相比，用垂直定位喷枪沉积的金属前驱体可能更适合于制备CIGS薄膜。

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  • 来源
    《Applied Surface Science》 |2014年第1期|109-114|共6页
  • 作者

    J.Wang; J.Zhu; Y.X. He;

  • 作者单位

    State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China;

    State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China;

    State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China;

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  • 正文语种 eng
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  • 关键词

    Tilted-location; Upright-location; Cu(In,Ga)Se_2 (CIGS); Raman spectra; Ordered vacancy compounds (OVC);

    机译：倾斜位置;直立位置;Cu（In;Ga）Se_2（CIGS）;拉曼光谱有序空缺化合物（OVC）;

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