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首页> 外文期刊>Applied Surface Science >Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers
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Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers

机译：用ArF和KrF激光在空气和去离子水中辐照的InP / InGaAs / InGaAsP微结构的化学演化

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摘要

Irradiation of quantum semiconductor microstructures with ultraviolet pulsed lasers could induce surface defects and modify chemical composition of the microstructure capping material that during high-temperature annealing leads to selected area bandgap engineering through the process known as quantum well intermixing (QW1). In this work, we investigate the role of both ArF and KrF excimer lasers in the QWI process of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized (D1) water. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy analysis was employed to study the chemical composition of the irradiated surface and investigate the chemical evolution of ArF and KrF laser irradiated microstructures. The results indicate that lnP_xO_y, oxides are the dominating surface products of the ArF and KrF lasers interaction with inP. Consistent with this observation is a relatively greater bandgap blue shift of ~130 nm found in the microstructures irradiated in air, in comparison to a maximum of 60 nm blue shift observed in the microstructures irradiated in a DI water environment.
机译：用紫外线脉冲激光辐照量子半导体微结构可能会引起表面缺陷，并改变微结构覆盖材料的化学成分，这种材料在高温退火过程中会通过称为量子阱混合（QW1）的过程导致选定的带隙工程。在这项工作中，我们调查了ArF和KrF准分子激光器在InP / InGaAs / InGaAsP微观结构在空气和去离子水（D1）中辐照的QWI过程中的作用。利用X射线光电子能谱和二次离子质谱分析技术研究了被辐照表面的化学成分，并研究了ArF和KrF激光辐照微观结构的化学演化。结果表明，InP_xO_y氧化物是ArF和KrF激光与inP相互作用的主要表面产物。与该观察结果一致的是，与在去离子水环境中辐照的微结构中观察到的最大60 nm蓝移相比，在空气中辐照的微结构中发现了相对较大的〜130 nm的带隙蓝移。

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