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Study on the effects of different sulfur vaporization temperature on the properties of CuInS_2 thin films

机译:不同硫汽化温度对CuInS_2薄膜性能的影响

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摘要

CuInS_2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S_2 (s) + Ar atmosphere at 425 ℃ for 1 h. Effects of different S vapor temperature from 150 to 400 ℃ on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300 ℃ exhibited CIS tetragonal structure with secondary phases such as Cu_xS_y, CuIn_5S_8, and In_xS_y. The sulfurized thin films with S vaporization temperature over 350℃ showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350 ℃ were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350 ℃. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10~4 cm~(-1), respectively.
机译:通过In / Cu金属堆叠前驱体的硫化制备CuInS_2(CIS)吸收体薄膜。在425℃的S_2(s)+ Ar气氛中,使用商业炉系统将前驱体薄膜硫化1 h。研究了150〜400℃不同S蒸气温度对CIS薄膜结构,形貌,组成和光学性质的影响。 X射线衍射和拉曼研究表明,S汽化温度低于300℃的硫化薄膜呈现出CIS四方结构,具有Cu_xS_y,CuIn_5S_8和In_xS_y等第二相。 S汽化温度超过350℃的硫化薄膜表现出单一的CIS四方结构。 CIS薄膜的组成比表明,在S蒸发温度超过350℃的CIS薄膜中,Cu / In和S /(Cu + In)的比分别为1.0-1.2和0.9-1.1,而当化学汽化时,其组成比偏离化学计量。低于350℃的S汽化温度的硫化薄膜。光学研究表明,CIS薄膜的带隙能和吸收系数分别为1.18 eV至1.5 eV和超过10〜4 cm〜(-1)。

著录项

  • 来源
    《Applied Surface Science》 |2013年第1期|572-577|共6页
  • 作者单位

    Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon 305-701, South Korea,Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea;

    Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon 305-701, South Korea,Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea;

    Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon 305-701, South Korea,Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Cu, Gwangju 500-757, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Cu, Gwangju 500-757, South Korea;

    Department of Physics, Shivaji University, Kolhapur 416-004, India;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Cu, Gwangju 500-757, South Korea;

    Solar city center, Korea Institute of Industrial Technology, Oryong-Dong, Buk-Gu, Gwang-Ju, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Cu, Gwangju 500-757, South Korea;

    Photovoltaic Research Group, Korea Institute of Energy Research, 71 -2 Jang-Dong, Yuseong-Gu, Daejeon 305-343, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CuInS_2 (CIS); thin film solar cells (TFSCs); sulfurization; vaporization temperature; spowder; low cost process;

    机译:CuInS_2(CIS);薄膜太阳能电池(TFSCs);硫化;汽化温度;喷雾;低成本工艺;

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