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首页> 外文期刊>Applied Surface Science >Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target
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Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target

机译：溅射功率对带有旋转圆柱靶的脉冲直流磁控溅射沉积的ZnO：Ga透明导电氧化物膜性能的影响

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摘要

Effect of sputtering power on the properties of ZnO:Ga (GZO) transparent conductive oxide (TCO) films was investigated on the films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target. At lower sputtering power up to 2.0 kW, the films showed flat surfaces with some pit-like structures. However, films morphology deteriorated with higher sputtering power up to 3.5 kW as reflected in the rough porous surfaces. Microstructures of the films evolved into the uniformly shaped columnar grains well aligned with the c-axis with the increasing sputtering power up to 2.0 kW, but further increasing the sputtering power caused the irregularity of the grain shapes and their orientations. Accordingly, the film deposited at 2.0 kW showed the lowest electrical resistivity of 4.89 x 10~(-4) Ω cm achieved through the highest Hall mobility of 25.9 cm~2 V~(-1) s~(-1). All the GZO films in this study showed the optical transmittances higher than 80%.
机译：研究了溅射功率对ZnO：Ga（GZO）透明导电氧化物（TCO）薄膜性能的影响，该薄膜是通过脉冲DC磁控溅射和旋转圆柱靶沉积的。在高达2.0 kW的较低溅射功率下，薄膜显示出具有一些凹坑状结构的平坦表面。然而，如在粗糙的多孔表面上所反映的那样，当溅射功率高达3.5 kW时，膜的形貌会恶化。随着溅射功率增加到2.0 kW，薄膜的微观结构逐渐演变成与c轴完全对齐的均匀形状的圆柱状晶粒，但是溅射功率的进一步增加导致晶粒形状及其取向的不规则性。因此，在2.0kW下沉积的膜表现出通过最高的25.9cm〜2V〜（-1）s〜（-1）的霍尔迁移率实现​​的最低电阻率4.89×10〜（-4）Ωcm。这项研究中所有的GZO薄膜均显示出高于80％的透光率。

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  • 来源
    《Applied Surface Science》 |2013年第15期|216-222|共7页
  • 作者

    Kyung-Jun Ahn; Ji-Hyeon Park; Beom-Ki Shin; Woong Lee; Geun Young Yeom; Jae-Min Myoung;

  • 作者单位

    Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-Dong, Suwon, Cyeonggi 440-746, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea;

    School of Nano and Advanced Materials Engineering, Changwon National University, Changwon National University, 9 Sarim-Dong, Changwon, Gyeongnam 641-773, Republic of Korea;

    Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-Dong, Suwon, Cyeonggi 440-746, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea;

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  • 正文语种 eng
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  • 关键词

    transparent conductive oxide; Ga-doped ZnO; pulsed DC magnetron sputtering;

    机译：透明导电氧化物;Ga掺杂的ZnO;脉冲直流磁控溅射;

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