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首页> 外文期刊>Applied Surface Science >Spatial-resolved cathode luminescence study of S-doped ZnO particles for the luminescence of UV, green and orange band emission
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Spatial-resolved cathode luminescence study of S-doped ZnO particles for the luminescence of UV, green and orange band emission

机译：掺杂S的ZnO颗粒的空间分辨阴极发光研究，用于紫外，绿色和橙色带发射

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摘要

The hexagonal bi-pillar structures of undoped and sulfur-doped ZnO particles have been synthesized by hydrothermal method to study the relationship between UV and long wavelength emissions, green emission (GE) and orange emission (OE) bands. A room temperature photoluminescence comparison between undoped and sulfur-doped ZnO shows an increase of long wavelength emission, that is presumably due to an increase of defects in doped ZnO. Spatial cathode luminescence (CL) analysis on a single ZnO particle shows a competitive behavior between GE and OE bands. The long wavelength emissions in ZnO are all related to Zn vacancies. GE will dominate if the Zn vacancy-related oxygen stays at lattice point; otherwise OE will dominate if this oxygen atom leaves lattice point to form a interstitial atom.
机译：通过水热法合成了未掺杂和硫掺杂的ZnO颗粒的六方双柱结构，研究了UV与长波长发射，绿色发射（GE）和橙色发射（OE）谱带之间的关系。未掺杂和硫掺杂的ZnO之间的室温光致发光比较显示出长波长发射的增加，这大概是由于掺杂的ZnO中的缺陷增加所致。对单个ZnO颗粒的空间阴极发光（CL）分析显示GE和OE谱带之间的竞争行为。 ZnO中的长波长发射都与Zn的空位有关。如果与锌空位有关的氧停留在晶格点，GE将占主导地位；否则，如果氧原子离开晶格点形成间隙原子，则OE将占主导地位。

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  • 来源
    《Applied Surface Science》 |2013年第15期|258-262|共5页
  • 作者

    Yuanping Sun; Hongying Guo; Feihong Jiang; Run Yuan; Jun Zhang; Xionghui Zeng; Taofei Zhou; Yongxin Qiu; Baoshun Zhang; Ke Xu; Hui Yang;

  • 作者单位

    Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;

    Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;

    Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;

    Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;

    Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;

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  • 正文语种 eng
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  • 关键词

    Hydrothermal crystal growth; Oxides; Zinc compounds; Semiconducting Ⅱ-Ⅵ materials;

    机译：水热晶体生长;氧化物;锌化合物;半导体Ⅱ-Ⅵ材料;

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