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首页> 外文期刊>Applied Surface Science >Nonlinear waves generated on liquid silicon layer by femtosecond laser pulses
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Nonlinear waves generated on liquid silicon layer by femtosecond laser pulses

机译：飞秒激光脉冲在液态硅层上产生的非线性波

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摘要

Two-dimensional nonlinear waves are generated by multipulse femtosecond ultraviolet laser irradiation of silicon above the ablation threshold. The train of 120-190 pulses generates the unidirectional cnoidal-like waves as well as the Y- and X-type configurations. In the region of high laser intensity, the interaction of line solitary-like waves give rise to the complex network structure. For 200 ≤ N < 220, the transition from stable into unstable waves takes place. At the critical number of pulses (≥230), the catastrophic destruction of cnoidal-like and solitary-like waves, takes place. Thus, the number of pulses plays the role of the control parameter. The stable cnoidal-like and solitary-like waves in a thin layer of molten silicon are reproduced by using the Kadomtsev-Petviashvili equation with negative dispersion (KP-Ⅱ), and the unstable ones by using the KP-Ⅰ equation with positive dispersion.
机译：通过在烧蚀阈值之上的硅的多脉冲飞秒紫外线激光辐照产生二维非线性波。一连串的120-190个脉冲会生成单向的类CNN波，以及Y型和X型配置。在高激光强度区域，线孤波的相互作用产生了复杂的网络结构。对于200≤N <220，会发生从稳定波到不稳定波的过渡。在临界脉冲数（≥230）时，发生了类似弦波和孤立波的灾难性破坏。因此，脉冲数起控制参数的作用。用负色散的Kadomtsev-Petviashvili方程（KP-Ⅱ）再现熔融硅薄层中的稳定的类CNN波和孤子形，用正色散的KP-Ⅰ方程再现不稳定的C虹波状和孤波。

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