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Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy

机译：磁控溅射外延生长铝氮化铟纳米棒中的电子输运性质

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摘要

The electronic transport properties of the wide-bandgap aluminum indium nitride (AlInN) nanorods (NRs) grown by ultrahigh-vacuum magnetron sputter epitaxy (MSE) have been studied. The conductivities of the ternary compound nanostructure locates at the value of 15Ω~(-1) cm~(-1), which is respectively one and two orders of magnitude lower than the binary GaN and InN counterparts grown by chemical vapor deposition (CVD). The very shallow donor level/band with the activation energy at 11 ± 2 meV was obtained by the temperature-dependent measurement. In addition, the photoconductivity has also been investigated. The photoconductive (PC) gain of the NRs device can reach near 2400 under a low bias at 0.1 V and the light intensity at 100 W m~(-2) for ultraviolet response in vacuum. The power-insensitive gain and ambience-dependent photocurrent are also observed, which is attributed to the probable surface-controlled PC mechanism in this ternary nitride nanostructure.
机译：研究了超高真空磁控溅射外延（MSE）生长的宽带隙氮化铝铟（AlInN）纳米棒（NRs）的电子传输性能。三元化合物纳米结构的电导率位于15Ω〜（-1）cm〜（-1）的值，分别比通过化学气相沉积（CVD）生长的二元GaN和InN对应物低一个和两个数量级。 。通过与温度有关的测量获得了非常浅的供体能级/带，其激活能为11±2 meV。另外，还研究了光电导性。 NRs器件的光电导（PC）增益在0.1 V的低偏压和100 W m〜（-2）的光强度下在真空中可产生接近2400的紫外线响应。还观察到功率不敏感的增益和与环境有关的光电流，这归因于这种三元氮化物纳米结构中可能的表面控制的PC机制。

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  • 来源
    《Applied Surface Science》 |2013年第ptab期|625-628|共4页
  • 作者

    Ruei-San Chen; Chih-Che Tang; Ching-Lien Hsiao; Per Olof Holtz; Jens Birch;

  • 作者单位

    Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 43, Sec.4, Keelung Rd., Taipei 10607, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;

    Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 LinkOping, Sweden;

    Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 LinkOping, Sweden;

    Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 LinkOping, Sweden;

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  • 正文语种 eng
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  • 关键词

    Aluminum indium nitride; Nanorod; Photoconductivity; Magnetron sputter epitaxy;

    机译：氮化铝铟;纳米棒;光电导性磁控溅射外延;

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