• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >The effect of KCN passivation on IR spectra of a-Si based structures
【24h】

The effect of KCN passivation on IR spectra of a-Si based structures

机译：KCN钝化对a-Si基结构的红外光谱的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

From the analysis of IR spectra of double layer structures after KCN passivation the presence of four absorption bands at 720-810cm~(-1) (assigned as Si—C bond), 870-1060 cm~(-1) (assigned as Si—H_n andSi—O bonds), 1930-2200 cm~(-1) (assigned as Si—H_n bonds) and absorption band around 2360 cm~(-1( (assigned as Si—NCO bond) was found. As IR spectra between 1400 and 1600cm~(-1) (assigned as C—H, NH2) and 3200-3300 cm~(-1) (assigned as C—H and N—H) under influence of KCN passivation did not change we suggest that formation of HCN, CH and NH was eliminated (polymeric HCN). From analysis of absorption bands assigned as Si—H_n, CN and SiNC (1950-2200cm~(-1)) and absorption bands assigned as Si—O bond (1000-1200 cm~(-1)) it is evident the different influence of passivation on samples and . In the spectra typical features of OH group, hydrogen bridge bonding and Si—Si—OCN formation were observed. From these results can be drawn the binding of CN to Si through oxygen atoms.
机译：通过KCN钝化后双层结构的红外光谱分析，在720-810cm〜（-1）（称为Si-C键），870-1060 cm〜（-1）（称为Si）存在四个吸收带。 -H_n和Si-O键），在1930-2200 cm〜（-1）处（称为Si-H_n键），在2360 cm〜（-1（Si-NCO键处））附近有吸收带。在KCN钝化的影响下，在1400至1600cm〜（-1）（分别指定为CH，NH2）和3200-3300 cm〜（-1）（分别指定为CH和NH）之间，我们建议保持不变通过分析指定为Si-H_n，CN和SiNC的吸收带（1950-2200cm〜（-1））和指定为Si-O键的吸收带（1000-HCN），消除了HCN，CH和NH的形成（聚合HCN）。 1200 cm〜（-1））钝化对和。在光谱中观察到OH基团的典型特征，氢桥键和Si-Si-OCN的形成，从这些结果可以得出CN通过氧原子与Si结合。

著录项

  • 来源
    《Applied Surface Science》 |2012年第21期|p.8406-8408|共3页
  • 作者

    Martin Kopani; Milan Mikula; Naozumi Fujiwara; Masao Takahashi; EmilPincik;

  • 作者单位

    Faculty of Medicine of Comenius University, Sasinkova 4, 811 08 Bratislava, Slovakia;

    Faculty of Chemical and Food Technology of SUT, Radlinskeha 9, 812 37 Bratislava, Slovakia;

    Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    Institute of Physics of SAS, Dubravska cesta 9, 845 11 Bratislava, Slovakia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    infrared spectroscopy; passivation; amorphous silicon; KCN treatment;

    机译：红外光谱钝化非晶硅KCN治疗;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号