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Improvement of electrical and optical properties of molybdenum doped zinc oxide films by introducing hydrogen

机译：通过引入氢改善钼掺杂氧化锌薄膜的电学和光学性能

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摘要

Doped ZnO films are promising candidates as a front electrode in silicon film solar cells. In present work, we report on efforts to obtain highly conductive and transparent hydrogen and molybdenum co-doped ZnO (HMZO) films prepared by pulsed direct current (DC) magnetron sputtering. Investigations were made to see the effect of hydrogen (H2) flow rate on structural, electrical and optical properties. The results indicate that H_2 flow rate has a considerable influence on the transparent conductive properties of molybdenum doped ZnO (MZO) films. A reduced resistivity of 69.2% and a broadening optical band gap of 5.7% were obtained with the optimal H_2 flow rate of 5 seem. The average transmittance of more than 86% in the range of 400-1100 nm was obtained with the optimal H_2 flow rate. Crater-like surface morphology with root-mean-square (RMS) roughness of 46.5 nm was also obtained after etching by diluted hydrochloric acid (HC1). Such a co-doping growing method present here may be useful for wide spectra absorption thin film solar cells.
机译：掺杂的ZnO薄膜有望成为硅薄膜太阳能电池中的前电极。在目前的工作中，我们报告了通过脉冲直流磁控溅射制备高导电性和透明性的氢和钼共掺杂的ZnO（HMZO）薄膜的努力。进行了调查，以了解氢气（H2）流速对结构，电学和光学性质的影响。结果表明，H_2流量对掺钼ZnO（MZO）薄膜的透明导电性能有很大影响。在5sccm的最佳H_2流速下，电阻率降低了69.2％，光学带隙扩大了5.7％。在最佳H_2流速下，在400-1100 nm范围内，平均透射率超过86％。在用稀盐酸（HCl）蚀刻后，还获得了均方根（RMS）粗糙度为46.5 nm的类似坑状表面形态。这里存在的这种共掺杂生长方法对于宽光谱吸收薄膜太阳能电池可能是有用的。

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  • 来源
    《Applied Surface Science》 |2012年第22期|p.8797-8801|共5页
  • 作者

    Yanfeng Wang; Qian Huang; Changchun Wei; Dekun Zhang; Ying Zhao; Xiaodan Zhang;

  • 作者单位

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

    Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Weijin Road 94#, Nankai district, Tianjin 300071, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    transparent conductive oxide; molybdenum doped ZnO; hydrogen; magnetron sputtering; solar cell;

    机译：透明导电氧化物;钼掺杂的ZnO;氢;磁控溅射;太阳能电池;

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