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Instability of nanostructures patterned in polystyrene under high electric field gradients

机译：高电场梯度下在聚苯乙烯中构图的纳米结构的不稳定性

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摘要

A nanolithography technique based on the lateral displacement of electrically biased AFM tip was developed for nanostructures formation of 30-100 nm in width and 1-10 ran in height in the polystyrene (PS) films. It was demonstrated that the nanostructures patterned in annealed PS films (90K Mw) show slow exponential relaxation between 55 and 265 h depending on their size. Relaxation of the nanostructures in non-annealed films usually occurred in minutes. It was observed that in the annealed samples a negative electric charge accumulated in the areas where the nanostructures formed while in the non-annealed samples only the positive charge in exposed areas was detected using the electric force microscopy. After 320 h of monitoring under the humidity maintained between 25 and 27% it was suggested that slow dynamical changes of the nanostructures can be attributed to the negative electric charge dissipation in the annealed samples.
机译：开发了一种基于电偏置AFM尖端横向位移的纳米光刻技术，用于在聚苯乙烯（PS）薄膜中形成宽度为30-100 nm，高度为1-10 nm的纳米结构。结果表明，在退火的PS膜（90K Mw）中构图的纳米结构根据其尺寸在55至265小时之间显示出缓慢的指数松弛。非退火膜中的纳米结构松弛通常在数分钟内发生。可以观察到，在退火的样品中，负电荷累积在形成纳米结构的区域中，而在未退火的样品中，仅使用曝光显微镜检测到暴露区域中的正电荷。在湿度保持在25％到27％之间的情况下进行了320小时的监测之后，表明纳米结构的缓慢动态变化可归因于退火样品中的负电荷耗散。

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