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Improved electron injection of OLEDs with a thin PBD layer at Alq_3/Cs_2CO-3 interface

机译:在Alq_3 / Cs_2CO-3界面上具有薄PBD层的OLED的改进的电子注入

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摘要

In this study, the effect of one oxadiazole derivative (PBD) using as an electron injection layer (EIL) at Alq_3/Cs_2CO_3 interface has been investigated. The present of PBD EIL was showed an interesting enhanced electron injection for OLEDs although the nominal electron injection barrier for PBD based OLEDs is much larger, because PBD owns an obvious higher intrinsic the Lowest Unoccupied Molecular Orbital level (2.3 eV) than that of Alq_3 (3.0 eV). For example, the current density of OLEDs at 8 V was increased from 54mA/cm~2 to 168mA/cm2 when inserting a thin PBD layer (5nm) at Alq_3/Cs_2CO_3 interface. Here the increased current is suggested associating with the changed electronic structure of PBD when it contacts with Cs_2CO_3.
机译:在这项研究中,已经研究了一种恶二唑衍生物(PBD)在Alq_3 / Cs_2CO_3界面上用作电子注入层(EIL)的效果。尽管基于PBD的OLED的标称电子注入势垒要大得多,但PBD EIL的存在显示出了对OLED的有趣的增强电子注入,这是因为PBD具有比Alq_3( 3.0 eV)。例如,当在Alq_3 / Cs_2CO_3界面插入薄的PBD层(5nm)时,OLED在8 V时的电流密度从54mA / cm〜2增加到168mA / cm2。在此建议增加的电流与PBD与Cs_2CO_3接触时电子结构的变化有关。

著录项

  • 来源
    《Applied Surface Science》 |2011年第10期|p.4608-4611|共4页
  • 作者单位

    Institute of Optoelectronics, College of Optoelectronics Engineering, Shenzhen University, Shenzhen, PR China;

    Institute of Optoelectronics, College of Optoelectronics Engineering, Shenzhen University, Shenzhen, PR China;

    Institute of Optoelectronics, College of Optoelectronics Engineering, Shenzhen University, Shenzhen, PR China;

    Institute of Optoelectronics, College of Optoelectronics Engineering, Shenzhen University, Shenzhen, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Oxadiazole; Cesium carbonate; Electron; injection mechanism; Electronic structure;

    机译:恶二唑;碳酸铯;电子;注射机制电子结构;

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