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Electrochemical synthesis of ZnO nanoflowers and nanosheets on porous Si as photoelectric materials

机译:多孔硅作为光电材料电化学合成ZnO纳米花和纳米片

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摘要

Well-aligned ZnO nanoflowers and nanosheets were synthesized on porous Si (PS) at different applied potentials by electrodeposition approach. The deposits were grown using the optimized program and were characterized by means of cyclic voltammetry (CV), amperometry I-t (I-t), open-circuit poten-tiometry. X-ray diffraction (XRD) analysis proved a strong preferential orientation (1 0 0) on PS. Scanning electronic microscopy (SEM) observation showed the deposits consist of nanoflowers with uniform grain size of about 100 nm in diameter and nanosheets, which may have potential applications in nanodevices and nanotechnologies. Thus, ZnO grown on PS can be used as photoelectric materials due to its larger photoelectric effect compared to Si wafer according to open-circuit potential (OCP) study. Optical band gap measurements were made on samples using UV-visible spectrophotometer thus giving a band gap of 3.35 eV.
机译:通过电沉积方法在不同的施加电势下,在多孔硅(PS)上合成了取向良好的ZnO纳米花和纳米片。使用最优化程序生长沉积物,并通过循环伏安法(CV),电流法I-t(I-t),开路电位法进行表征。 X射线衍射(XRD)分析证明在PS上具有很强的优先取向(1 0 0)。扫描电子显微镜(SEM)观察表明,沉积物由直径约100 nm的均匀晶粒的纳米花和纳米片组成,可能在纳米器件和纳米技术中具有潜在的应用。因此,根据开路电势(OCP)研究,与PS相比,在PS上生长的ZnO具有更大的光电效应,因此可以用作光电材料。使用紫外可见分光光度计在样品上进行光学带隙测量,因此带隙为3.35 eV。

著录项

  • 来源
    《Applied Surface Science》 |2011年第10期|p.4643-4649|共7页
  • 作者单位

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

    Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; Si; PS; Electrodeposition; OCP; Band gap;

    机译:氧化锌;PS;电沉积;OCP;带隙;

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