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Hydrogen doping of MgO thin films prepared by pulsed laser deposition

机译:脉冲激光沉积制备的MgO薄膜的氢掺杂

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摘要

Hydrogen doped MgO films were grown by pulsed laser deposition method. Gaseous hydrogen stored in cavities of milky MgO single crystal targets provided doping in film deposition process. Clear MgO targets without hydrogen were used in the preparation of reference films. The influence of hydrogen doping on firing voltage (FV) of gas discharge and its AC frequency dependence was investigated. According to ther-moluminescence experiments, the films grown from milky targets contained two kinds of electron traps with the activation energies of 0.051 and 0.31 eV, while latter traps were absent in reference samples. The 0.31 eV trap was assigned to the hydride ion H~ occupying an oxygen vacancy site in MgO crystal structure. Using standard gas mixture (Ne-10% Xe), FVs of hydrogen doped sample showed considerable frequency dependence and were up to 55 V lower in comparison to the reference sample. The FVs of reference sample were shifted 14-28 V to higher values when N_2 gas was added to the mixture. The N_2 addition lowered the FVs of hydrogen doped sample up to 38 V and almost eliminated the FV frequency dependence.
机译:通过脉冲激光沉积法生长氢掺杂的MgO薄膜。存储在乳状MgO单晶靶腔中的气态氢在薄膜沉积过程中提供了掺杂。不含氢的透明MgO靶材用于制备参考膜。研究了氢掺杂对气体放电点火电压(FV)的影响及其与交流频率的关系。根据热释光实验,从乳状靶标上生长的薄膜包含两种电子陷阱,其激活能分别为0.051和0.31 eV,参考样品中不存在后者。在MgO晶体结构中占据氢氧空位的氢离子H〜被分配了0.31 eV陷阱。使用标准气体混合物(Ne-10%Xe),氢掺杂样品的FV显示出相当大的频率依赖性,并且与参考样品相比降低了55V。当向混合物中添加N_2气体时,参考样品的FV将14-28 V移至更高的值。 N_2的添加将氢掺杂样品的FV降低到38 V,几乎消除了FV频率依赖性。

著录项

  • 来源
    《Applied Surface Science》 |2011年第12期|p.5328-5331|共4页
  • 作者单位

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

    Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    mgo; plasma display panel; gas discharge; hydrogen; doping; thermoluminescence; thin films;

    机译:mgo;等离子显示板;气体放电;氢气;掺杂;热释光;薄膜;

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