机译:脉冲激光沉积制备的MgO薄膜的氢掺杂
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
Institute of Physics, University of Tartu, Riia 142,51 014 Tartu, Estonia;
mgo; plasma display panel; gas discharge; hydrogen; doping; thermoluminescence; thin films;
机译:在可变氧沉积压力下通过脉冲激光沉积在(001)MgO上生长的W掺杂Ba0.6Sr0.4TiO3薄膜的微波介电性能
机译:脉冲激光沉积法制备MgO薄膜的结构和放电性能
机译:脉冲激光沉积制备的高结晶度超薄MgO薄膜的发光特性
机译:用于通过脉冲激光沉积制备的YBCO薄膜的同性记MgO缓冲层
机译:通过脉冲激光沉积制备的氧化物薄膜的可湿性:新见解。
机译:通过单脉冲激光沉积工艺制备Y2O3掺杂氧化锆/氧化G二氧化铈双层电解质薄膜SOFC的SOFC电池。
机译:脉冲激光沉积制备的高结晶度超薄MgO薄膜的发光特性