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Optical properties of p-type CuAlO_2 thin film grown by rf magnetron sputtering

机译:射频磁控溅射制备p型CuAlO_2薄膜的光学性能

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摘要

We report the structural and optical properties of copper aluminium oxide (CuAlO_2) thin films, which were prepared on c-plane sapphire substrates by the radio frequency magnetron sputtering method. X-ray photoelectron spectroscopy (XPS) along with X-ray diffraction (XRD) analysis confirms that the films consist of delafossite CuAlO_2 phase only. The optical absorption studies show the indirect and direct bandgap is 1.8 eV and 3.45 eV, respectively. Room temperature photoluminescence (PL) measurements show three emission peaks at 360 nm (3.45 eV). 470 nm (2.63 eV) and 590 nm (2.1 eV). The first one is near band edge emission while the other two are originated from defects.
机译:我们报告了通过射频磁控溅射方法在c面蓝宝石衬底上制备的铜氧化铝(CuAlO_2)薄膜的结构和光学性质。 X射线光电子能谱(XPS)以及X射线衍射(XRD)分析证实了该薄膜仅由铜铁矿CuAlO_2相组成。光吸收研究表明间接带隙和直接带隙分别为1.8 eV和3.45 eV。室温光致发光(PL)测量显示360 nm(3.45 eV)处的三个发射峰。 470 nm(2.63 eV)和590 nm(2.1 eV)。第一个是近带边缘发射,而另外两个是由缺陷引起的。

著录项

  • 来源
    《Applied Surface Science》 |2011年第20期|p.8330-8333|共4页
  • 作者单位

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    rf magnetron sputtering; CuAlO_2 thin films; photoluminescence;

    机译:射频磁控溅射;CuAlO_2薄膜;光致发光;

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