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RF-PACVD of water repellent and protective HMDSO coatings on bell metal surfaces: Correlation between discharge parameters and film properties

机译：钟形金属表面上的憎水和HMDSO保护涂层的RF-PACVD：放电参数与薄膜性能之间的关系

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摘要

Hexamethyldisiloxane (HMDSO) films have been deposited on bell metal using radiofrequency plasma assisted chemical vapor deposition (RF-PACVD) technique. The protective performances of the HMDSO films and their water repellency have been investigated as a function of DC self-bias voltage on the substrates during deposition. Plasma potential measurements during film deposition process are carried out by self-compensated emissive probe. Optical emission spectroscopy (OES) analyses of the plasma during deposition reveal no significant change in the plasma composition within the DC self-bias voltage range of -40 V to -160 V that is used. Raman and X-ray photoelectron spectroscopy (XPS) studies are carried out for film chemistry analysis and indicate that the impinging ion energy on the substrates influences the physio-chemical properties of the HMDSO films. At critical ion energy of 113 qV (corresponding to DC self-bias voltage of -100 V), the deposited HMDSO film exhibits least defective Si-O-Si chemical structure and highest inorganic character and this contributes to its best corrosion resistance behavior. The hardness and elastic modulus of the films are found to be bias dependent and are 1.27 GPa and 5.36 GPa for films deposited at -100 V. The critical load for delamination is also bias dependent and is 11 mN for this film. The water repellency of the HMDSO films is observed to be dependent on the variation in surface roughness. The results of the investigations suggest that HMDSO films deposited by RF-PACVD can be used as protective coatings on bell metal surfaces.
机译：六甲基二硅氧烷（HMDSO）膜已使用射频等离子体辅助化学气相沉积（RF-PACVD）技术沉积在钟形金属上。研究了HMDSO膜的防护性能及其防水性能，该性能与沉积过程中基材上的DC自偏压有关。薄膜沉积过程中的等离子体电势测量通过自补偿发射探头进行。沉积过程中等离子体的光发射光谱（OES）分析显示，在所用的-40 V至-160 V的直流自偏置电压范围内，等离子体组成没有明显变化。拉曼和X射线光电子能谱（XPS）研究已进行了薄膜化学分析，结果表明，离子在基板上的撞击会影响HMDSO薄膜的物理化学性质。在113 qV的临界离子能量（对应于-100 V的DC自偏压）下，沉积的HMDSO膜表现出最少的Si-O-Si化学结构缺陷和最高的无机特性，这有助于其最佳的耐腐蚀性能。发现膜的硬度和弹性模量与偏压有关，对于在-100 V下沉积的膜而言，其为1.27 GPa和5.36 GPa。分层的临界载荷也与偏压有关，对于该膜为11 mN。观察到HMDSO膜的疏水性取决于表面粗糙度的变化。研究结果表明，通过RF-PACVD沉积的HMDSO膜可用作钟形金属表面的保护涂层。

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  • 来源
    《Applied Surface Science》 |2011年第20期|p.8469-8477|共9页
  • 作者

    A.J.Choudhury; S.A.Barve; Joyanti Chutia; A.R. Pal; R. Kishore; Jagannath; M.Pande; D.S.Patil;

  • 作者单位

    Materials Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035, Assam, India;

    Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India;

    Materials Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035, Assam, India;

    Materials Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035, Assam, India;

    Material Science Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India;

    Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India;

    High Pressure Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India;

    Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India;

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  • 正文语种 eng
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  • 关键词

    RF plasma; PACVD; hexamethyldisiloxane (HMDSO); plasma diagnostics; corrosion protective coatings; hydrophobic coatings;

    机译：射频等离子体PACVD;六甲基二硅氧烷（HMDSO）;血浆诊断;防腐蚀涂料;疏水涂料;

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