机译:Sno_2纳米管内在缺陷和氮取代引起的铁磁性。
School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
SnO_2 nanotube; Magnetism; Ab initio calculations; Vacancy;
机译:单壁SiC纳米管中固有缺陷和硼取代引起的铁磁性
机译:单壁ZnO纳米管中固有缺陷和碳取代引起的铁磁性
机译:ZnO纳米线中固有缺陷和碳取代引起的铁磁性
机译:缺陷诱导的氮氧化物在(10,0)单壁碳纳米管上的化学吸附:密度泛函计算的见解
机译:6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
机译:通过内在途径诱导细胞凋亡的新型4-甲氧基取代和5-甲基取代的(3S4S)-(-)-顺式-甲壳素衍生物的合成和细胞毒活性
机译:其他杂质和缺陷引起的硅中替代氮杂质的电荷态变化