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首页> 外文期刊>Applied Surface Science >Aluminium-Induced Crystallization Of Amorphous Silicon Films Deposited By DC Magnetron Sputtering On Glasses
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Aluminium-Induced Crystallization Of Amorphous Silicon Films Deposited By DC Magnetron Sputtering On Glasses

机译：直流磁控溅射在玻璃上沉积的非晶硅薄膜的铝诱导结晶

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摘要

Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 °C during 4h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 °C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 °C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).
机译：通过直流磁控溅射技术，通过将氩气和氢等离子体混合物沉积在玻璃基板上的铝上，通过热蒸发沉积非晶硅（a-Si）和氢化非晶硅（a-Si：H）膜。将a-Si / Al和a-Si：H / Al薄膜在真空密封的灯泡中在4h内于250至550°C的不同温度下退火。在该贡献中提出了退火温度对生长的以及真空退火的a-Si / Al和a-Si：H / Al薄膜的光学，结构和形态性能的影响。随着退火温度的升高，a-Si：H / Al薄膜的平均透射率增加。 XRD测量清楚地证明在450°C时开始结晶。在a-Si：H / Al中，出现在衍射图中的衍射峰的数量和强度比在a-Si / Al层中更重要。结果表明，沉积在Al /玻璃上的a-Si：H薄膜在450°C以上结晶，并且比a-Si层结晶更好。氢的存在引起铝诱导结晶（AIC）制得的多晶硅的结构性能的改善。

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  • 来源
    《Applied Surface Science》 |2011年第23期|p.9689-9693|共5页
  • 作者

    F. Kezzoula; A. Hammouda; M. Kechouane; P. Simon; S.E.H. Abaidia; A. Keffous; R. Cherfi; H. Menari; A. Manseri;

  • 作者单位

    UDTS 2Bd Frantz Fanon 7 merveilles Algiers. Algeria Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University, Algeria;

    UPR CNRS 3079 CEMHT1 - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2, France Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers, Algeria Universite d'Orleans, 45067 Orleans Cedex 2, France;

    Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers, Algeria;

    UPR CNRS 3079 CEMHT1 - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2, France Universite d'Orleans, 45067 Orleans Cedex 2, France;

    Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University, Algeria;

    UDTS 2Bd Frantz Fanon 7 merveilles Algiers. Algeria;

    Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers, Algeria;

    UDTS 2Bd Frantz Fanon 7 merveilles Algiers. Algeria;

    UDTS 2Bd Frantz Fanon 7 merveilles Algiers. Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Crystallization; Thin films; Hydrogenated amorphous silicon; AIC; Raman; XRD;

    机译：结晶;薄膜;氢化非晶硅;AIC;拉曼;XRD;

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