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首页> 外文期刊>Applied Surface Science >Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition
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Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition

机译：沉积后快速热退火对原子层沉积生长的铝掺杂ZnO薄膜的影响

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摘要

Aluminum-doped ZnO (AZO) thin films with alternating stacks of ZnO and Al_2O_3 were grown by atomic layer deposition (ALD) on c-face sapphire substrates. Post-deposition rapid thermal annealing (RTA) at 950 ℃ for 5 min was conducted in all AZO samples. The X-ray diffraction patterns demonstrate that the intensity of cubic ZnAl_2O_4 (311) peaks grow with the increase of Al content, which implies the diffusion of Al atoms into ZnO. The reduction of dominant peak intensity of cubic ZnO (111) and the increase of hexagonal ZnO (100) and (101) peaks intensity suggest that there were variations of crystal structures for the samples with Al content above 6%. Two orders of magnitude of electron concentration raises in samples with 2 and 4% Al content compared with the as-grown without RTA-treated samples. It also infers that RTA facilitates diffusion of Al atoms in AZO material structures and activation of Al dopants. When Al content is above 6%, the variations of crystal structures with the enhancement of biaxial compressive strain result in blue shift in energy of photoluminescence peak and in frequency of E_2~(high) phonon mode of micro-Raman spectra. The deterioration of crystal quality due to the increase of strain-induced defects hinders the electrical and optical performance when Al doping concentration is above 6% in AZO materials.
机译：通过原子层沉积（ALD）在c面蓝宝石衬底上生长具有ZnO和Al_2O_3交替堆叠的铝掺杂ZnO（AZO）薄膜。在所有AZO样品中进行950℃的沉积后快速热退火（RTA）5分钟。 X射线衍射图谱表明，随着Al含量的增加，立方ZnAl_2O_4（311）峰的强度增大，这表明Al原子向ZnO中的扩散。立方ZnO（111）的主峰强度降低，六角形ZnO（100）和（101）峰强度升高，表明Al含量高于6％的样品的晶体结构存在变化。与未经RTA处理的样品相比，Al含量为2％和4％的样品中电子浓度提高了两个数量级。还可以推断，RTA有助于Al原子在AZO材料结构中的扩散和Al掺杂剂的活化。当Al含量高于6％时，随着双轴压缩应变的增加，晶体结构发生变化，导致光致发光峰能量和微拉曼光谱的E_2〜（高）声子模频率发生蓝移。当AZO材料中的Al掺杂浓度高于6％时，由于应变引起的缺陷的增加而导致的晶体质量的劣化阻碍了电学和光学性能。

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