• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Surface treatment of nanoporous silicon with noble metal ions and characterizations
【24h】

Surface treatment of nanoporous silicon with noble metal ions and characterizations

机译：贵金属离子对纳米多孔硅的表面处理及其表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A very large surface to volume ratio of nanoporous silicon (PS) produces a high density of surface states, which are responsible for uncontrolled oxidation of the PS surface. Hence it disturbs the stability of the material and also creates difficulties in the formation of a reliable electrical contact. To passivate the surface states of the nanoporous silicon, noble metals (Pd, Ru, and Pt) were dispersed on the PS surface by an electroless chemical method. GIXRD (glancing incidence X-ray diffraction) proved the crystallinity of PS and the presence of noble metals on its surface. While FESEM (field emission scanning electron microscopy) showed the morphology, the EDX (energy dispersive X-ray) line scans and digital X-ray image mapping indicated the formation of the noble metal islands on the PS surface. Dynamic SIMS (secondary ion mass spectroscopy) further confirmed the presence of noble metals and other impurities near the surface of the modified PS. The variation of the surface roughness after the noble metal modification was exhibited by AFM (atomic force microscopy). The formation of a thin oxide layer on the modified PS surface was verified by XPS (X-ray photoelectron spectroscopy).
机译：纳米多孔硅（PS）的非常大的表面体积比会产生高密度的表面态，这导致PS表面的不受控制的氧化。因此，它破坏了材料的稳定性，并且在形成可靠的电接触中也造成了困难。为了钝化纳米多孔硅的表面状态，通过无电化学方法将贵金属（Pd，Ru和Pt）分散在PS表面上。 GIXRD（入射X射线衍射）证明了PS的结晶性以及其表面上存在贵金属。 FESEM（场发射扫描电子显微镜）显示出形态，而EDX（能量分散X射线）线扫描和数字X射线图像映射表明在PS表面上形成了贵金属岛。动态SIMS（二次离子质谱）进一步证实了改性PS表面附近存在贵金属和其他杂质。通过AFM（原子力显微镜）显示出贵金属改性后的表面粗糙度的变化。通过XPS（X射线光电子能谱）证实了在改性的PS表面上形成了薄的氧化物层。

著录项

  • 来源
    《Applied Surface Science》 |2010年第13期|p.4231-4240|共10页
  • 作者

    J. Kanungo; S. Maji; A.K. Mandal; S. Sen; E. Bontempi; A.K. Balamurugan; A.K. Tyagi; K. Uvdal; S. Sinha; H. Saha; S. Basu;

  • 作者单位

    IC Design & Fabrication Centre, Dept. of Electronics & Tele-comm. Engineering, Jadavpur University, Kolkata 700032, India;

    IC Design & Fabrication Centre, Dept. of Electronics & Tele-comm. Engineering, Jadavpur University, Kolkata 700032, India;

    Central Class & Ceramic Research Institute, CSIR, Kolkata, India;

    Central Class & Ceramic Research Institute, CSIR, Kolkata, India;

    INSTM and Laboratorio di Chimica per le Tecnologie, Universitd di Brescia, via Branze 38, 25123 Brescia, Italy;

    Materials Science Division, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102, India;

    Materials Science Division, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102, India;

    Division of Molecular Surface Physics and Nanoscience, Department of Physics, Chemistry and Biology (IFM), Linkoping University, SE-5821 83 Linkoeping, Sweden;

    Department of Physics, University of New Haven, USA;

    IC Design & Fabrication Centre, Dept. of Electronics & Tele-comm. Engineering, Jadavpur University, Kolkata 700032, India;

    IC Design & Fabrication Centre, Dept. of Electronics & Tele-comm. Engineering, Jadavpur University, Kolkata 700032, India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    porous silicon; surface treatment; noble metals; morphology; surface oxide;

    机译：多孔硅表面处理;贵金属形态学;表面氧化物;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号