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首页> 外文期刊>Applied Surface Science >Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O_2 plasma cleaning and intermediate layers
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Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O_2 plasma cleaning and intermediate layers

机译：通过引入O_2等离子体清洁和中间层来改善垂直GaN基LED的界面粘合力

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摘要

Interfacial adhesion between an indium tin oxide (ITO)/Ni/Ag/Ni/Au p-electrode, and Au and Ni/Au seeds in vertical GaN-based light emitting diodes (LEDs) was enhanced by O_2 plasma cleaning treatment of the Au surface in the p-electrode. However, AES and REELS analyses of the Au surface in the p-electrode detected surface damage to the p-electrode and photoresist (PR) passivation structure from O_2 plasma cleaning. W/Ni and Al/Ni adhesion layers were introduced in the Au seed to increase interfacial adhesion between Au seed and untreated PR passivation. Forward leakage current as low as 0.91 nA at 2 V was observed for the vertical LED with the Al/Ni/Au seed, for which adhesion strength to O_2 plasma-cleaned Au and untreated PR was 141.2 MPa and 62.8 MPa, respectively.
机译：通过对Au进行O_2等离子体清洗处理，增强了铟锡氧化物（ITO）/ Ni / Ag / Ni / Au p电极与垂直GaN基发光二极管（LED）中的Au和Ni / Au晶种之间的界面附着力p电极的表面。然而，对p电极中Au表面的AES和REELS分析检测到了O_2等离子体清洗对p电极和光致抗蚀剂（PR）钝化结构的表面损伤。 W / Ni和Al / Ni粘附层被引入到Au种子中，以增加Au种子和未经处理的PR钝化之间的界面粘附。对于带有Al / Ni / Au晶种的垂直LED，在2 V时观察到正向泄漏电流低至0.91 nA，其对O_2等离子体清洗的Au和未经处理的PR的粘附强度分别为141.2 MPa和62.8 MPa。

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