Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(111)A surfaces

V.G. Kesler; rnV.A. Seleznev; rnA.P. Kovchavtsev; rnA.A. Guzev

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Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(111)A surfaces

机译：HCl-异丙醇处理并真空退火的InAs（111）A表面的组成，形貌和表面重组速率

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X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(111)A surface chemically etched in isopropanol-hydrochloric acid solution (HCI-iPA) and subsequently annealed in vacuum in the temperature range 200-500℃. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10~8 cm~(-2), entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300℃. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

机译：X射线光电子能谱和原子力显微镜用于检查InAs（111）A表面在异丙醇-盐酸溶液（HCI-iPA）中化学蚀刻并随后在200-200°C真空中退火的化学组成和表面形态500℃。蚀刻2-30分钟会导致在样品表面上分别形成1-2 nm深和高，横向尺寸为50-100 nm的“凹坑”和“小丘”。在300℃以上的温度进行真空退火后，所观察到的局部地层密度高达3×10〜8 cm〜（-2）从表面完全消失。使用直接方法，电子束显微分析，我们已经确定了小丘型缺陷包括氧气和过量的砷，而“凹点”的化学成分被证明与InAs相同。发现真空退火导致相对于InAs表面上的In的As表面浓度的降低，同时伴随着表面复合速率的升高。

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来源
《Applied Surface Science》 |2010年第14期|p.4626-4632|共7页
作者
V.G. Kesler; rnV.A. Seleznev; rnA.P. Kovchavtsev; rnA.A. Guzev;
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作者单位

Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090, Russia;

rnInstitute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090, Russia;

rnInstitute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090, Russia;

rnInstitute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090, Russia;

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原文格式 PDF
正文语种 eng
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关键词
etching; annealing; InAs; XPS; AFM;

机译：蚀刻退火;InAs;XPS;原子力显微镜;

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Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(111)A surfaces

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