Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

著录项

• 来源
  《Applied Surface Science》 |2010年第14期|p.4734-4737|共4页
• 作者

  L. Li; Z. Yang; Z. Zuo; J.H. Lim; J.L. Liu;

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• 作者单位

  Quantum Structures Laboratory. Department of Electrical Engineering, University of California, Riverside, CA 92521, USA;

  rnQuantum Structures Laboratory. Department of Electrical Engineering, University of California, Riverside, CA 92521, USA;

  rnQuantum Structures Laboratory. Department of Electrical Engineering, University of California, Riverside, CA 92521, USA;

  rnQuantum Structures Laboratory. Department of Electrical Engineering, University of California, Riverside, CA 92521, USA;

  rnQuantum Structures Laboratory. Department of Electrical Engineering, University of California, Riverside, CA 92521, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  ZnO; thermal stability; molecular-beam epitaxy; II-VI semiconductors; x-ray diffraction; photoluminescence;

  机译：氧化锌;热稳定性;分子束外延;II-VI半导体;X射线衍射;光致发光;