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Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

机译：研究多孔碳化硅作为环境和光电应用的新材料

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摘要

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na_2O_2 solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.
机译：在本文中，我们提供了在不同的基于HF的溶液中对碳化硅（SiC）进行化学和电化学蚀刻及其在不同领域（如光电（光电二极管）和环境（气体传感器））中的应用的实验研究。 SiC薄膜已经通过脉冲激光沉积法生长。已经探索了不同的氧化剂。已经表明，表面的形貌随蚀刻条件（氧化剂，浓度，温度等）而变化。开发了一种基于HF：Na_2O_2溶液的新型多晶6H-SiC化学抛光溶液。此外，已经进行了电化学蚀刻方法以在多晶和薄SiC膜上形成多孔SiC层。 PL结果表明，多孔多晶6H-SiC膜和多孔SiC薄膜表现出强烈的蓝色发光和绿蓝色发光，分别以2.82eV（430nm）和2.20eV（560nm）为中心。已经研究了基于两种准备好的样品的不同器件结构，如光电二极管和气体传感器。

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  • 来源
    《Applied Surface Science》 |2010年第18期|P.5629-5639|共11页
  • 作者

    A. Keffous; N. Gabouze; A. Cheriet; Y. Belkacem; A. Boukezzata;

  • 作者单位

    Silicon Technology Development Unit (UDTS), 02, Bd Frantz FANON, B.P. 140 Algiers, 16200, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02, Bd Frantz FANON, B.P. 140 Algiers, 16200, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02, Bd Frantz FANON, B.P. 140 Algiers, 16200, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02, Bd Frantz FANON, B.P. 140 Algiers, 16200, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02, Bd Frantz FANON, B.P. 140 Algiers, 16200, Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    silicon carbide; electro(chemical); PSC; gas sensing; photodiode;

    机译：碳化硅电（化学）;PSC;气体感应光电二极管;

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