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Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

机译：MPECVD法生长氮掺杂纳米晶金刚石薄膜的电子扩散研究

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摘要

Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (ⅰ) directly onto the silicon substrate (NNCD/Si), (ⅱ) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH_4/H_2 with a ratio of 98%/l%/l% (NNCD/NCD/Si), and (ⅲ) silicon wafer with 100nm thickness SiO_2 layer (NNCD/SiO_2/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current-voltage (Ⅰ-Ⅴ) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature (～800 ℃). The study concluded that the SiO_2 layer could effectively prevents the diffusion of electrons.
机译：将氮掺杂的纳米晶金刚石（NNCD）膜沉积到具有三种不同层结构的p型硅衬底上：（ⅰ）直接沉积在硅衬底（NNCD / Si）上，（ⅱ）带有未掺杂的纳米晶金刚石层的硅沉积在硅衬底上配方Ar / CH_4 / H_2的比例为98％/ 1％/ 1％（NNCD / NCD / Si）与上述NNCD的方式相同，以及（1/3）SiO_2层厚度为100nm的硅片（NNCD / SiO_2 / Si）。原子力显微镜（AFM），X射线衍射（XRD）和拉曼光谱被用来表征生长的氮掺杂金刚石薄膜的形貌和微观结构。制作了银胶体/银触点，以测量三种不同结构的电流-电压（Ⅰ-Ⅴ）特性。在高温（〜800℃）下的沉积过程中，来自CVD反应器氢等离子体的电子向p型硅衬底扩散。研究得出结论，SiO_2层可以有效地防止电子扩散。

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  • 来源
    《Applied Surface Science》 |2010年第21期|P.6233-6236|共4页
  • 作者

    Qiang Hu; Rakesh K. Joshi; Ashok Kumar;

  • 作者单位

    Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350, United States;

    rnDepartment of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350, United States;

    rnDepartment of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350, United States Nanomaterials & Nanomanufacturing Research Center, University of South Florida, Tampa, FL 33620-5350, United States;

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  • 正文语种 eng
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  • 关键词

    electron diffusion; diamond film; CVD;

    机译：电子扩散金刚石膜化学气相沉积;

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