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首页> 外文期刊>Applied Surface Science >Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well
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Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

机译：闪锌矿GaN / AlGaN量子阱中氢杂质的电子态

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摘要

Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.
机译：研究了基体的结合能和局限在掺锌的GaN / AlGaN量子阱中的氢供体的几个低激发态。它们是通过变分法在单频带有效质量近似的框架内计算的。用各种杂质位置作为阱宽度的函数研究施主态。通过能量相关有效质量包括导带非抛物线来进行计算。通过使用二参数试验波函数，改进了变分解。结果似乎更好，并且与其他研究者一致。为了支持我们的结果，我们观察到当使用两个参数波动函数时，变分参数的值是一致的。我们发现，包含非抛物线效应会导致对所有井宽值具有更多的约束力，并且对于窄井具有重要意义。将结果与现有文献进行比较。

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