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首页> 外文期刊>Applied Surface Science >Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature
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Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

机译：低温生长的Si上超薄Ge缓冲层上的SiGe膜的热稳定性

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摘要

The thermal stability of SiGe films on an ultra thin Ge buffer layer on Si fabricated at low temperature has been studied. The microstructure and morphology of the samples were investigated by high-resolution X-ray diffraction, Raman spectra and atomic force microscopy, and using a diluted Secco etchant to reveal dislocation content. After thermal annealing processing, it is observed that undulated surface, threading dislocations (TDs) and stacking faults (SFs) appeared at the strained SiGe layer, which developed from the propagation of a misfit dislocation (MD) during thermal annealing, and no SFs but only TDs formed in strain-relaxed sample. And it is found that the SiGe films on the Ge layer grown at 300℃ has crosshatch-free surface and is more stable than others, with a root mean square surface roughness of less than 2 nm and the threading dislocation densities as low as～10~5 cm~(-2). The results show that the thermal stability of the SiGe films is associated with the Ge buffer layer, the relaxation extent and morphology of the SiGe layer.
机译：研究了在低温下在硅上形成的超薄锗缓冲层上的硅锗膜的热稳定性。通过高分辨率X射线衍射，拉曼光谱和原子力显微镜研究样品的微观结构和形态，并使用稀释的Secco蚀刻剂显示位错含量。经过热退火处理后，观察到应变的SiGe层出现了起伏的表面，螺纹位错（TDs）和堆垛层错（SFs），这是由于热退火过程中错配位错（MD）的传播而形成的，而没有SFs，但是只有在松弛应变样品中形成了TD。结果表明，在300℃下生长的Ge层上的SiGe薄膜表面无交叉影线，且较稳定，其均方根表面粗糙度小于2 nm，穿线位错密度低至〜10 〜5厘米〜（-2）。结果表明，SiGe薄膜的热稳定性与Ge缓冲层，SiGe层的弛豫程度和形貌有关。

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  • 来源
    《Applied Surface Science》 |2010年第22期|p.6936-6940|共5页
  • 作者

    Chengzhao Chen; Zhiwen Zhou; Yanghua Chen; Cheng Li; Hongkai Lai; SongyanChen;

  • 作者单位

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China,Department of Physics and Electronics Engineering, Hanshan Normal University, Chaozhou 521041, People's Republic of China;

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

    Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

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  • 正文语种 eng
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  • 关键词

    thermal stability; sige; lt-ge; strain relaxation;

    机译：热稳定性;ge lt-ge;应变松弛;

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