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Growth of Ni-Mn-Ga high-temperature shape memory alloy thin films by magnetron sputtering technique

机译：磁控溅射法生长Ni-Mn-Ga高温形状记忆合金薄膜

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摘要

Ni-Mn-Ga thin films have been fabricated by using magnetron sputtering technique under various substrate negative bias voltages. The effect of substrate negative bias voltage on the compositions and surface morphology of Ni-Mn-Ga thin films was systematically investigated by energy dispersive X-ray spectrum and atomic force microscopy, respectively. The results show that the Ni contents of the thin films increase with the increase of the substrate negative bias voltages, whereas the Mn contents and Ga contents decrease with the increase of substrate negative bias voltages. It was also found that the surface roughness and average particle size of the thin films remarkably decrease with the increase of substrate negative bias voltages. Based on the influence of bias voltages on film compositions, a Ni_(56)Mn_(27)Ga_(17) thin film was obtained at the substrate negative bias voltage of 30 V. Further investigations indicate that the martensitic transformation start temperature of this film is up to 584 K, much higher than room temperature, and the film has a non-modulated tetragonal martensitic structure at room temperature. Transmission electron microscopy observations reveal that microstructure of the thin film exhibits an internally (111) type twinned substructure. The fabrication of Ni_(56)Mn_(27)Ga_(17) high-temperature shape memory alloy thin film will contribute to the successful development of microactuators.
机译：通过使用磁控溅射技术在各种衬底负偏压下制备Ni-Mn-Ga薄膜。分别通过能量色散X射线谱和原子力显微镜系统研究了衬底负偏压对Ni-Mn-Ga薄膜组成和表面形貌的影响。结果表明，薄膜的Ni含量随衬底负偏压的增加而增加，而Mn含量和Ga含量随衬底负偏压的增加而减小。还发现，随着基板负偏压的增加，薄膜的表面粗糙度和平均粒径显着降低。基于偏置电压对薄膜成分的影响，在衬底负偏置电压为30 V的情况下获得了Ni_（56）Mn_（27）Ga_（17）薄膜。进一步的研究表明该薄膜的马氏体转变开始温度温度高达584 K，远高于室温，并且薄膜在室温下具有非调制的四方马氏体结构。透射电子显微镜观察表明，薄膜的微观结构表现出内部（111）型孪生子结构。 Ni_（56）Mn_（27）Ga_（17）高温形状记忆合金薄膜的制备将有助于微致动器的成功开发。

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  • 来源
    《Applied Surface Science》 |2010年第22期|p.6655-6659|共5页
  • 作者

    C.Liu; H.W.Mu; L.X.Gao; W.J.Ma; X.An; Z.Y.Gao; W.Cai;

  • 作者单位

    School of Electronics Science, Northeast Petroleum University, Daqing 163318, China;

    School of Electronics Science, Northeast Petroleum University, Daqing 163318, China;

    HLJ Province Key Lab of Senior-education for Electronic Engineering, Heilongjiang University, Harbin 150080, China;

    College of Science, Northeast Dianli University, Jilin 132012, China;

    HLJ Province Key Lab of Senior-education for Electronic Engineering, Heilongjiang University, Harbin 150080, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 15000, China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    shape memory alloy (sma); sputtering; thin films; ni-mn-ga;

    机译：形状记忆合金（SMA）;溅射薄膜;-;

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