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首页> 外文期刊>Applied Surface Science >Sn doping effects on the electro-optical properties of sol gel derived transparent ZnO films
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Sn doping effects on the electro-optical properties of sol gel derived transparent ZnO films

机译：Sn掺杂对溶胶-凝胶法透明ZnO薄膜电光性能的影响

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摘要

Undoped and tin (Sn) doped ZnO films have been deposited by sol gel spin coating method. The Sn/Zn nominal volume ratio was 1, 3 and 5% in the solution. The effect of Sn incorporation on structural and electro-optical properties of ZnO films was investigated. All the films have polycrystalline structure, with a preferential growth along the ZnO (002) plane. The crystallite size was calculated using a well-known Scherrer's formula and found to be in the range of 26-16 nm. X-ray diffraction patterns of the films showed that Sn incorporation leads to substantial changes in the structural characteristics of ZnO films. The SEM measurements showed that the surface morphology of the films was affected from the Sn incorporation. The highest average optical transmittance value in the visible region was belonging to the undoped ZnO film. The optical band gap and Urbach energy values of these films were determined. The absorption edge shifted to the lower energy depending on the Sn dopant. The shift of absorption edge is associated with shrinkage effect. The electrical conductivity of the ZnO film enhanced with the Sn dopant. From the temperature dependence of conductivity measurements, the activation energy of ZnO film increased with Sn incorporation.
机译：已通过溶胶凝胶旋涂法沉积了未掺杂和锡（Sn）掺杂的ZnO薄膜。溶液中的Sn / Zn标称体积比为1、3和5％。研究了掺锡对ZnO薄膜结构和电光性能的影响。所有薄膜均具有多晶结构，并沿ZnO（002）平面优先生长。使用众所周知的Scherrer公式计算微晶尺寸，发现其在26-16nm范围内。膜的X射线衍射图表明，Sn的掺入导致ZnO膜结构特征的实质性变化。 SEM测量表明，膜的表面形态受Sn掺入的影响。可见光区的最高平均透光率值属于未掺杂的ZnO膜。确定了这些膜的光学带隙和Urbach能值。取决于Sn掺杂剂，吸收边缘移至较低能量。吸收边缘的移动与收缩效果有关。 ZnO薄膜的电导率随Sn掺杂剂的增加而增加。从电导率测量的温度依赖性来看，ZnO薄膜的活化能随掺Sn的增加而增加。

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