Migration of CrSi_2 nanocrystals through nanopipes in the silicon cap

著录项

• 来源
  《Applied Surface Science》 |2010年第23期|P.7331-7334|共4页
• 作者

  N.G.Galkin; L. Dozsa; E.A. Chusovitin; B. Pecz; L. Dobos;

  展开▼
• 作者单位

  Institute for Automation and Control Processes of Far Eastern Branch Russian Academy of Sciences, 690041 Vladivostok, Radio 5, Russia;

  rnResearch Institute for Technical Physics and Materials Science, Konkoly Thege 29-33, H-1525 Budapest, P.O. Box 49, Hungary;

  rnInstitute for Automation and Control Processes of Far Eastern Branch Russian Academy of Sciences, 690041 Vladivostok, Radio 5, Russia;

  rnResearch Institute for Technical Physics and Materials Science, Konkoly Thege 29-33, H-1525 Budapest, P.O. Box 49, Hungary;

  rnResearch Institute for Technical Physics and Materials Science, Konkoly Thege 29-33, H-1525 Budapest, P.O. Box 49, Hungary;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  chromium disilicide; quantum dots; diffusion of Cr in silicon; Si cap growth; defects in Si;

  机译：二硅化铬量子点;Cr在硅中的扩散;硅盖增长;硅中的缺陷;