• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >SERS-active substrates based on n-type porous silicon
【24h】

SERS-active substrates based on n-type porous silicon

机译：基于n型多孔硅的SERS活性基板

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Porous silicon (PS) prepared from n-type Si crystal is proposed as a new material for the fabrication of sensitive substrates for surface-enhanced Raman scattering (SERS). The formation procedure for nanos-tructured silver films on the surface of PS was optimized. Maximum of SERS enhancement for rhodamine 6G probing molecule is observed for samples obtained by the immersion plating from the water solution of AgNO_3 with the 10 mM concentration during 5 min. The dependence of morphological parameters of PS and corresponding silvered surfaces on the anodization current density has been studied. It is shown that the most SERS activities possess substrates produced from PS with lower porosity. The optimum of the PS layer thickness for high Raman signal is about 5 μm. The detection limit for rhodamine 6G adsorbed on Ag-coated PS from the 100 pM solution is established to be comparable with that for p-type PS-based substrates. Thus, the n-type porous silicon is suitable material for the preparation of sensitive SERS-active substrates.
机译：提出了由n型硅晶体制备的多孔硅（PS）作为一种新材料，用于制造用于表面增强拉曼散射（SERS）的敏感衬底。优化了PS表面纳米结构银膜的形成工艺。对于在5分钟内通过浸镀从浓度为10 mM的AgNO_3水溶液中获得的样品，观察到了若丹明6G探测分子的最大SERS增强。研究了PS和相应的镀银表面的形态参数对阳极氧化电流密度的依赖性。结果表明，大多数SERS活性都具有由孔隙率较低的PS生产的基质。对于高拉曼信号，PS层的最佳厚度约为5μm。建立了从100 pM溶液吸附在涂有Ag的PS上的若丹明6G的检出限，可与基于p型PS的底物相媲美。因此，n型多孔硅是用于制备敏感的SERS活性基底的合适材料。

著录项

  • 来源
    《Applied Surface Science》 |2010年第23期|P.6969-6976|共8页
  • 作者

    A. Yu. Panarin; S.N. Terekhov; K.I. Kholostov; V.P. Bondarenko;

  • 作者单位

    B.I. Stepanov Institute of Physics NASB, Nezalezhnasti Avenue, 68,220072, Minsk, Belarus;

    rnB.I. Stepanov Institute of Physics NASB, Nezalezhnasti Avenue, 68,220072, Minsk, Belarus;

    rnBelarussian State University of Informatics and Radioelectronics, P. Brovka 6,220013 Minsk, Belarus;

    rnBelarussian State University of Informatics and Radioelectronics, P. Brovka 6,220013 Minsk, Belarus;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SERS-active substrates; n-type porous silicon; rhodamine 6G;

    机译：SERS活性底物;n型多孔硅;罗丹明6G;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号