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Secondary electron yield measurements of carbon covered multilayer optics

机译：碳覆盖多层光学器件的二次电子产率测量

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摘要

Carbon contamination on extreme ultraviolet (EUV) optics has been observed in EUV lithography. In this paper, we performed in situ monitoring of the build-up and removal of carbon contamination on Mo/Si EUV multilayers by measuring the secondary electron yield as a function of primary electron energy. An electron beam with an energy of 2 keV was used to simulate the EUV radiation induced carbon contamination. For a clean EUV multilayer, the maximum secondary electron yield is about 1.5 electrons per primary electron at a primary electron energy of 467 eV. The maximum yield reduced to about 1.05 at a primary electron energy of 322 eV when the surface was covered by a non-uniform carbon layer with a maximum thickness of 7.7 nm. By analyzing the change in the maximum secondary electron yield with the final carbon layer thickness, the limit of detection was estimated to be less than 0.1 nm.
机译：在EUV光刻中已经观察到极紫外（EUV）光学元件上的碳污染。在本文中，我们通过测量作为一次电子能量的函数的二次电子产率，对Mo / Si EUV多层膜上的碳污染的形成和清除进行了现场监测。能量为2 keV的电子束用于模拟EUV辐射引起的碳污染。对于干净的EUV多层，在467 eV的一次电子能量下，最大二次电子产率约为每个一次电子1.5个电子。当表面被最大厚度为7.7 nm的不均匀碳层覆盖时，在322 eV的一次电子能量下，最大产率降低至约1.05。通过分析最大二次电子产量随最终碳层厚度的变化，估计检测限小于0.1 nm。

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  • 来源
    《Applied Surface Science》 |2010年第2期|p.354-361|共8页
  • 作者

    Juequan Chen; Eric Louis; Jan Verhoeven; Rob Harmsen; Chris J. Lee; Monika Lubomska; Maarten van Kampen; Willem van Schaik; Fred Bijkerk;

  • 作者单位

    FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14,3439 MN Nieuwegein, The Netherlands;

    FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14,3439 MN Nieuwegein, The Netherlands;

    Kamerlingh Onnes Laboratory, Leiden Institute of Physics, Leiden University, Leiden, The Netherlands;

    FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14,3439 MN Nieuwegein, The Netherlands;

    MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands;

    ASML B.V., De Run 1110, 5503 LA Veldhoven, The Netherlands;

    ASML B.V., De Run 1110, 5503 LA Veldhoven, The Netherlands;

    ASML B.V., De Run 1110, 5503 LA Veldhoven, The Netherlands;

    FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14,3439 MN Nieuwegein, The Netherlands,MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands;

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  • 正文语种 eng
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  • 关键词

    secondary electron yield; carbon contamination; multilayer optics;

    机译：二次电子产率碳污染;多层光学;

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