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Reflectivity of porous-pyramids structured silicon surface

机译:多孔金字塔结构硅表面的反射率

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摘要

The antireflection of porous-pyramids structured silicon surface has been studied. The porous surface is formed by stain etching in HF/Fe(NO_3)_3 aqueous solution after textured in KOH/IPA solution. Reflectivity measurements show an overall reflectance of 4.2% for porous-pyramids textured silicon surface in the range from 400 to 900 nm. An optimal etching time of 30 min is obtained when both reflectivity and photo-generated carriers lifetime are considered. This technique may be probably used in the texturization process for high-efficiency silicon solar cells.
机译:研究了多孔金字塔结构的硅表面的抗反射性。在KOH / IPA溶液中纹理化之后,通过在HF / Fe(NO_3)_3水溶液中进行污点蚀刻来形成多孔表面。反射率测量显示,多孔金字塔质感的硅表面在400至900 nm范围内的总反射率为4.2%。当同时考虑反射率和光生载流子寿命时,可获得30分钟的最佳蚀刻时间。该技术可能会用于高效硅太阳能电池的组织化过程中。

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  • 来源
    《Applied Surface Science》 |2010年第2期|p.472-475|共4页
  • 作者单位

    State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China;

    State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China;

    State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China;

    State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China;

    State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    reflectivity; porous-pyramids; texturization; silicon;

    机译:反射率多孔金字塔纹理化;硅;

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