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InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

机译：通过分子束外延生长的InGaN纳米棒阵列：生长机理结构和光学性质

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摘要

Vertically c-axis-aligned InGaN nanorod arrays were synthesized on c-plane sapphire substrates by radio-frequency molecular beam epitaxy. In situ reflection high-energy electron diffraction was used to monitor the growth process. X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscope, and photoluminescence were used to investigate the structural and optical properties of the nanorods. The growth mechanism was studied and a growth model was proposed based on the experimental data. A red shift of photoluminescence spectrum of InGaN nanorods with increasing growth time was found and attributed to the partial release of stress in the InGaN nanorods.
机译：通过射频分子束外延在c面蓝宝石衬底上合成了垂直c轴对齐的InGaN纳米棒阵列。原位反射采用高能电子衍射监测生长过程。 X射线衍射，透射电子显微镜，场发射扫描电子显微镜和光致发光被用来研究纳米棒的结构和光学性质。研究了其生长机理，并根据实验数据提出了生长模型。发现InGaN纳米棒的光致发光光谱随生长时间的增加而发生红移，这归因于InGaN纳米棒中的应力的部分释放。

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  • 来源
    《Applied Surface Science》 |2009年第14期|6705-6709|共5页
  • 作者

    K.M. Wu; Y. Pan; C. Liu;

  • 作者单位

    Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education and Department of Physics, Wuhan University, Wuhan 430072, China;

    Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education and Department of Physics, Wuhan University, Wuhan 430072, China;

    Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education and Department of Physics, Wuhan University, Wuhan 430072, China;

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  • 正文语种 eng
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  • 关键词

    InGaN; nanorods; molecular beam epitaxy;

    机译：氮化镓;纳米棒分子束外延;

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