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Influence Of Crystal Orientation On Copper Oxidation Failure

机译:晶体取向对铜氧化失败的影响

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The influences of crystal orientation on copper oxidation were investigated. The results indicated that crystal orientation of copper substrate has a great effect on the growth rate, the morphology of oxide film and the extent of oxidation failure. Shear test showed the adhesion strength between Cu(110) and its oxide film was the highest, whereas, the adhesion strength between Cu(311) and its oxide film was the lowest. SEM observations revealed that the oxide film grown on Cu(311) delaminated from substrate seriously, while the oxide film grown on Cu(100) and Cu(110) did not reveal such a phenomenon. Cu(100) and Cu(110) exhibited thinner oxide thickness compared to those on Cu(311) and Cu(111). The activation energy for oxide growth on Cu(100) and Cu(110) was calculated to be the highest while that on Cu(311) was the lowest.
机译:研究了晶体取向对铜氧化的影响。结果表明,铜基板的晶体取向对生长速率,氧化膜的形态和氧化破坏的程度有很大的影响。剪切试验表明,Cu(110)与其氧化膜之间的粘附强度最高,而Cu(311)与其氧化膜之间的粘附强度最低。 SEM观察表明,在Cu(311)上生长的氧化膜严重地从基板上剥离,而在Cu(100)和Cu(110)上生长的氧化膜没有发现这种现象。与在Cu(311)和Cu(111)上相比,Cu(100)和Cu(110)的氧化层厚度更薄。计算出在Cu(100)和Cu(110)上氧化物生长的活化能最高,而在Cu(311)上最低。

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