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首页> 外文期刊>Applied Surface Science >Surface-defect-states photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method
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Surface-defect-states photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method

机译：一步水合成法制备的CdS纳米晶体中的表面缺陷态光致发光

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摘要

CdS nanocrystals were prepared by a simple one-step aqueous synthesis method using thioglycolic acid (TGA) as the capping molecule, and characterized by X-ray powder diffraction (XRD), UV-vis absorption spectra and photoluminescence (PL) emission spectroscopy. The effects of both TGA/Cd and Cd/S molar ratio on the surface-defect-state PL intensity of CdS nanocrystals have been investigated. It was found that all of the as-prepared CdS nanocrystals showed a strong broad emission in the range of 450-700 nm centered at 560 nm, which was attributed to the recombination of an electron trapped in a sulfur vacancy with a hole in the valance band of CdS. The surface-defect-states emission intensity of CdS nanocrystals significantly increased with the increase of Cd/S molar ratio, and showed a maximum when Cd/S molar ratio was 2.0. If Cd/S molar ratio continued to increase, namely more than 2.0, the surface-defect-states emission intensity would decrease. It was found that the surface-defect-states emission intensity increased with the increase the TGA/Cd molar ratio, and showed a maximum when the TGA/Cd molar ratio was equal to 1.8, and a further increase of the TGA/Cd molar ratio would lead to the decrease of the surface-defect-states emission intensity.
机译：CdS纳米晶体是通过简单的一步法以巯基乙酸（TGA）为封端分子的水合成方法制备的，并通过X射线粉末衍射（XRD），紫外可见吸收光谱和光致发光（PL）发射光谱进行了表征。研究了TGA / Cd和Cd / S摩尔比对CdS纳米晶体表面缺陷态PL强度的影响。发现所有制备的CdS纳米晶体在以560 nm为中心的450-700 nm范围内均显示出很强的宽发射，这归因于捕获在硫空位中的电子与化合价的空穴重新结合CdS带。 CdS纳米晶体的表面缺陷态发射强度随Cd / S摩尔比的增加而显着增加，当Cd / S摩尔比为2.0时表现出最大值。如果Cd / S摩尔比继续增加，即大于2.0，则表面缺陷态的发射强度将降低。发现表面缺陷态发射强度随TGA / Cd摩尔比的增加而增加，并且当TGA / Cd摩尔比等于1.8时表现出最大值，并且TGA / Cd摩尔比进一步增加。将导致表面缺陷态发射强度的降低。

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