首页> 外文期刊>Applied Surface Science >Self-consistent theory for the built-in voltage in metal-organic semiconductor-metal structures
【24h】

Self-consistent theory for the built-in voltage in metal-organic semiconductor-metal structures

机译:金属有机半导体-金属结构中内在电压的自洽理论

获取原文
获取原文并翻译 | 示例
           

摘要

A self-consistent theory for calculation of built-in voltage (U_(bi)) of metal-organic semiconductor-metal (MOSM) structures is developed based on Gaussian energy distribution of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). It is shown that the built-in voltage depends not only on the work function difference of the two electrodes, but also on the mean energy level of HOMO and LUMO, as well as the Gaussian width of the energy distribution. The theory predicts that the spreading of HOMO and LUMO levels will results in an increase of U_(bi), and that U_(bi) decreases with increasing temperature.
机译:基于最高占据分子轨道(HOMO)和最低未占据分子轨道( LUMO)。结果表明,内建电压不仅取决于两个电极的功函数差,还取决于HOMO和LUMO的平均能级以及能量分布的高斯宽度。该理论预测HOMO和LUMO水平的扩散将导致U_(bi)的增加,并且U_(bi)随着温度的升高而降低。

著录项

  • 来源
    《Applied Surface Science》 |2009年第18期|8010-8013|共4页
  • 作者单位

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China The Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China;

    The Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

    Laboratory of Semiconductor Devices and Engineering, Lanzhou University, Tian-Shui Road, Lanzhou 730000, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    built-in voltage; metal-organic semiconductor-metal structure; theory;

    机译:内置电压金属-有机半导体-金属结构;理论;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号