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Influence of post-annealing on the properties of Sc-doped ZnO transparent conductive films deposited by radio-frequency sputtering

机译:后退火对射频溅射沉积掺杂Sc的ZnO透明导电膜性能的影响

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摘要

Sc-doped ZnO transparent conductive films are deposited on glass substrates by radio-frequency sputtering. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by energy dispersion X-ray spectroscopy, X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The experimental results show that these films are polycrystalline with a preferred [001] orientation. The lowest resistivity of 2.6 × 10~4 Ω cm is obtained from the film annealed at 500 ℃. The average optical transmittance of the films is over 90%. These results suggest that Sc-doped ZnO is a good candidate for fabricating high performance transparent conductive films.
机译:通过射频溅射将掺Sc的ZnO透明导电膜沉积在玻璃基板上。通过能量色散X射线光谱,X射线衍射,霍尔测量和光学透射光谱研究了退火后对膜的结构,形态,电学和光学性质的影响。实验结果表明,这些薄膜是具有优选[001]取向的多晶。在500℃退火的薄膜的最低电阻率为2.6×10〜4Ωcm。薄膜的平均透光率超过90%。这些结果表明,掺Sc的ZnO是制备高性能透明导电膜的良好选择。

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