机译:后退火对射频溅射沉积掺杂Sc的ZnO透明导电膜性能的影响
Department of Photoelectronic Engineering, College of Information Science and Engineering Yanshan University, Qinhuangdao 066004, China;
Department of Photoelectronic Engineering, College of Information Science and Engineering Yanshan University, Qinhuangdao 066004, China;
Department of Photoelectronic Engineering, College of Information Science and Engineering Yanshan University, Qinhuangdao 066004, China;
semiconductors; electrical properties; thin films; transparent conductive films; radio-frequency sputtering;
机译:射频,直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子传输和晶体学取向特征
机译:射频,直流和射频叠加直流磁控溅射沉积的高透明导电Al掺杂ZnO多晶线膜的载流子迁移率:晶界效应和晶粒体积中的散射
机译:基底温度对射频磁控溅射沉积钽掺杂透明导电TiO2薄膜性能的影响
机译:退火温度对直流比率溅射对Ti掺杂in_2O_3透明导电膜性能的影响
机译:通过中和离子束溅射和脉冲激光沉积沉积的n型薄膜透明导电氧化物的电学和光学性质的制备和表征。
机译:射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
机译:电子辐照对不同溅射功率下沉积的ZnO:Al透明导电膜的影响