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Study of defects in proton irradiated GaAs/AlGaAs solar cells

机译:质子辐照GaAs / AlGaAs太阳能电池缺陷的研究

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摘要

The properties of GaAs/AlGaAs solar cells irradiated with 40, 70, 100 and 170 keV protons have been studied. Current-voltage (IV) measurement showed that the worst degradation was found in the cells irradiated by 100 keV protons. The degradation was found defect dependent. Defect profile was obtained by the stopping and range of ions in matter (SRIM) simulation and deep-level transient spectroscopy (DLTS) measurement. In order to obtain the deep-level defect profile in depletion layer by DLTS measurement, the traditional calculation formula of defect concentration has been modified. DLTS measurement showed good agreement with that of the SRIM simulation.
机译:研究了用40、70、100和170 keV质子辐照的GaAs / AlGaAs太阳能电池的性能。电流电压(IV)测量显示,在100 keV质子辐照的电池中发现了最差的降解。发现降解取决于缺陷。通过物质中离子的终止和范围(SRIM)模拟以及深层瞬态光谱(DLTS)测量获得缺陷轮廓。为了通过DLTS测量获得耗尽层中的深层缺陷轮廓,对传统的缺陷浓度计算公式进行了修改。 DLTS测量与SRIM仿真显示出良好的一致性。

著录项

  • 来源
    《Applied Surface Science》 |2009年第19期|8257-8262|共6页
  • 作者单位

    Surface Physics Laboratory, Laboratory of Advanced Materials, Fudan University, 220 Handan Road, Shanghai 200433, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;

    Surface Physics Laboratory, Laboratory of Advanced Materials, Fudan University, 220 Handan Road, Shanghai 200433, China;

    Surface Physics Laboratory, Laboratory of Advanced Materials, Fudan University, 220 Handan Road, Shanghai 200433, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    solar cells; proton irradiation; defect profile; IV; DLTS;

    机译:太阳能电池;质子辐照缺陷概况IV;DLTS;

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