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XPS study of annealing induced effects on surface and interface electronic properties of Si/Ge nanostructures

机译:XPS研究退火诱导对Si / Ge纳米结构的表面和界面电子性能的影响

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摘要

The present study is focused on the influence of vacuum thermal treatment on surface/interface electronic properties of Si/Ge multilayer structures (MLS) characterized using X-ray photoelectron spectroscopy (XPS) technique. Desired [Si(5 nm)/Ge(5 nm)]_(×10) MLS were prepared using electron beam evaporation technique under ultra high vacuum (UHV) conditions. The core-level XPS spectra of as-deposited as well as multilayer samples annealed at different temperatures such as 100 ℃, 150 ℃ and 200 ℃ for 1 h show substantial reduction in Ge 2p peak integrated intensity, whereas peak intensity of Si 2p remains almost constant. The complete interdiffusion took place after annealing the sample at 200 ℃ for 5 h as confirmed from depth profiling of annealed MLS. The asymmetric behaviour in intensity patterns of Si and Ge with annealing was attributed to faster interdiffusion of Si into Ge layer. However, another set of experiments on these MLS annealed at 500 ℃ suggests that interdiffusion can also be studied by annealing the system at higher temperature for relatively shorter time duration.
机译:本研究集中于真空热处理对使用X射线光电子能谱(XPS)技术表征的Si / Ge多层结构(MLS)的表面/界面电子性能的影响。使用电子束蒸发技术在超高真空(UHV)条件下制备所需的[Si(5 nm)/ Ge(5 nm)] _(×10)MLS。在不同温度(例如100℃,150℃和200℃)下退火1 h的沉积样品以及多层样品的核心能级XPS光谱显示,Ge 2p峰的积分强度大大降低,而Si 2p的峰强度几乎保持不变不变。从退火的MLS的深度剖析证实,样品在200℃退火5 h后发生了完全相互扩散。 Si和Ge的强度图形随退火的不对称行为归因于Si更快地扩散到Ge层中。但是,另一组针对这些在500℃退火的MLS进行的实验表明,也可以通过在较高温度下将系统退火相对较短的时间来研究相互扩散。

著录项

  • 来源
    《Applied Surface Science》 |2009年第2期|489-494|共6页
  • 作者单位

    UGC-DAE Consortium for Scientific Research, University Campus. Indore 452001, India Instituut voor Kern- en Stralingsfysica and INPAC, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven. Belgium;

    UGC-DAE Consortium for Scientific Research, University Campus. Indore 452001, India Laboratorium voor Vaste-stoffysica en Magnetisme and INPAC. K.U. Leuven. Celestijnenlaan 200D. B-3001 Leuven. Belgium;

    UGC-DAE Consortium for Scientific Research, University Campus. Indore 452001, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    multilayers; interface; XPS; interdiffusion; annealing;

    机译:多层接口;XPS;相互扩散退火;

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